N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N32W1 1200 Volt 69 Amp for Renewable Energy Systems

Name: N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N32W1 1200 Volt 69 Amp for Renewable Energy Systems
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BCZ120N32W1
Availability: InStock

Key Attributes

Model Number: BCZ120N32W1

Product Custom Attributes

Drain To Source Voltage:

1.2kV

Current - Continuous Drain(Id):

69A

Operating Temperature -:

-55℃~+175℃

RDS(on):

32mΩ

Gate Threshold Voltage (Vgs(th)):

2.9V

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

7pF

Output Capacitance(Coss):

111pF

Pd - Power Dissipation:

348W

Input Capacitance(Ciss):

2.812nF

Gate Charge(Qg):

121nC

Mfr. Part #:

BCZ120N32W1

Package:

TO-247-4

Product Description

BCZ120N32W1 N-Channel Silicon Carbide Power MOSFET

Product Overview

The BCZ120N32W1 is a 1200 V, 69 A N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers reduced switching losses, increased switching frequency, and higher power density, leading to a reduction in heatsink requirements. Key benefits include high switching speed with low gate charge, low on-resistance with high blocking voltage, low capacitances, and low reverse recovery charge (Qrr). This device is halogen-free and RoHS compliant. It is ideal for use in switch mode power supplies, renewable energy systems, motor drives, and high voltage DC/DC converters.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide (SiC)
Channel Type: N-Channel
Compliance: Halogen Free, RoHS Compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (TC = 25 unless otherwise noted)
V_DSS	Drain to Source Voltage				1200	V
V_GS	Gate to Source Voltage (DC)		-10		+25	V
V_GSop	Recommended Operation Value		-4		+20	V
I_D	Drain Current Continuous	(V_GS=18V, T_C = 25)			69	A
I_D	Drain Current Continuous	(V_GS=18V, T_C = 100)			49	A
I_DM	Drain Current Pulse	with t_p limited by T_jmax at 100 s			140	A
P_D	Power Dissipation				348	W
T_{J, TSTG}	Operating and Storage Temperature Range		-55		175
Thermal Characteristics
R_JC	Thermal Resistance, Junction to Case, Max.				0.43	/W
R_JA	Thermal Resistance, Junction to Ambient, Max.				40	/W
Electrical Characteristics (T_C = 25 unless otherwise noted)
Off Characteristics
B_VDSS	Drain to Source Breakdown Voltage	V_GS = 0 V, I_D = 100 A	1200			V
I_DSS	Zero Gate Voltage Drain Current	V_DS = 1200 V, V_GS = 0 V		1	50	A
I_GSS	Gate-Source Leakage Current	V_GS = 18 V, V_DS = 0 V			250	nA
On Characteristics
V_GS(th)	Gate Threshold Voltage	V_GS = V_DS, I_DS = 11.5 mA	2.0	2.9	3.9	V
R_DS(on)	Static Drain to Source On Resistance	V_GS = 18 V, I_D = 40 A		32	48	m
R_DS(on)	Static Drain to Source On Resistance	V_GS = 20 V, I_D = 40 A, T_J = 175		58	52	m
g_fs	Transconductance	V_DS = 800V, V_GS = -4/18V, I_D = 40 A		22		S
Dynamic Characteristics
C_iss	Input Capacitance	V_DD=800V, V_GS=-4/18V, I_D= 40A, f = 1 MHzV_AC=25mV		2812		pF
C_oss	Output Capacitance	V_DD=800V, V_GS=-4/18V, I_D= 40A, f = 1 MHzV_AC=25mV		111		pF
C_rss	Reverse Capacitance	V_DD=800V, V_GS=-4/18V, I_D= 40A, f = 1 MHzV_AC=25mV		7		352	pF
Q_g(tot)	Total Gate Charge	V_GS = 18 V, I_D= 40 A		121		nC
Q_gs	Gate to Source Charge	V_GS = 18 V, I_D= 40 A, T_J = 175		20.9		nC
Q_gd	Gate to Drain Miller Charge	V_GS = 18 V, I_D= 40 A, T_J = 175		23.2		nC
R_G	Internal Gate Resistance			1
Switching Characteristics
t_d(on)	Turn-On Delay Time	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		23		ns
t_r	Turn-On Rise Time	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		9		ns
t_d(off)	Turn-Off Delay Time	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		27		ns
t_f	Turn-Off Fall Time	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		11		ns
E_on	Turn-on Switching Energy	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		170		J
E_off	Turn-off Switching Energy	V_DD=800V, V_GS=-4/18V, I_D= 40A, R_G(ext) = 5, L=276H		52		J
Source-Drain Diode Characteristics
I_S	Diode Forward Current	V_GS = -4V, I_SD = 20 A		72		A
V_SD	Diode Forward Voltage	V_GS = -4V, I_SD = 20 A, T_J = 175		3.3		V
t_rr	Reverse Recovery Time	V_R = 800 V, V_GS=-4V, I_SD = 40 A, di_F/dt = 3800 A/s		31		ns
Q_rr	Reverse Recovery Charge	V_R = 800 V, V_GS=-4V, I_SD = 40 A, di_F/dt = 3800 A/s		281		nC
I_rrm	Peak Reverse Recovery Current	V_R = 800 V, V_GS=-4V, I_SD = 40 A, di_F/dt = 3800 A/s		18		A

Package Outlines

TO247-4

SYMBOL	MIN	NOM	MAX
A	4.80	5.00	5.20
A1	2.21	2.41	2.61
A2	1.80	2.00	2.20
b	1.06	1.21	1.36
b1	2.33	2.63	2.93
b3	1.07	1.30	1.60
c	0.51	0.61	0.75
D	23.30	23.45	23.60
D1	16.25	16.55	16.85
E	15.74	15.94	16.14
E1	13.72	14.02	14.32
T1	2.35	2.50	2.65
e	2.54	BSC
e1	5.08	BSC
Q	5.49	5.79	6.09
L	17.27	17.57	17.87
L1	3.99	4.19	4.39
p	3.40	3.60	3.80
p1	7.19	REF

Package Marking and Ordering Information

Part Number	Top Marking	Package	Packing Method	Quantity
BCZ120N32W1	BCZ120N32W1	TO247-4	Tube	30 units

2504101957_Bestirpower-BCZ120N32W1_C46472754.pdf

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N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N32W1 1200 Volt 69 Amp for Renewable Energy Systems