TO220F Package N Channel MOSFET AUA039N10 with Low RDS on and Typical Threshold Voltage 1.2 to 2.5V
Key Attributes
Model Number:
AUA039N10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
83pF
Number:
1 N-channel
Output Capacitance(Coss):
865pF
Input Capacitance(Ciss):
3.562nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
60.7nC@10V
Mfr. Part #:
AUA039N10
Package:
TO-220F
Product Description
Product Overview
The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for applications requiring efficient switching. These enhancement-mode devices offer low drain-source on-resistance and are suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. They are characterized by easy gate control and a typical threshold voltage (Vth) ranging from 1.2 to 2.5 V.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max DFN5x6 (m) | RDS(on),max TO220 (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUN036N10 | DFN5X6 | AUN036N10 | 100 | 3.6 | - | 65 | 437 |
| AUP039N10 | TO220 | AUP039N10 | 100 | - | 3.9 | 65 | 437 |
| AUA039N10 | TO220F | AUA039N10 | 100 | - | 3.9 | 65 | 437 |
| AUB039N10 | TO263 | AUB039N10 | 100 | - | 3.9 | 65 | 437 |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 125 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 437 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 306 | mJ | Tc=25, VDD=50V, I=35A, L=0.1mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 35 | A | Tc=25, VDD=50V, L=0.1mH, RG=25 |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Power dissipation | Ptot | - | - | 151 | W | TC=25C (TO220&263) |
| 30 | W | TC=25C (TO220F) | ||||
| 75 | W | TC=25C (DFN5X6) | ||||
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (DFN5x6) | RDS(on) | - | 3.3 | 3.6 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO220&220F&263) | RDS(on) | - | 3.6 | 3.9 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 0.6 | - | f=1MHz, open drain |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 3562 | - | PF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | - | 865 | - | PF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 83 | - | PF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | - | 29 | - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Rise time | tr | - | 55 | - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Turn-off delay time | td(off) | - | 69 | - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Fall time | tf | - | 43 | - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 15.5 | - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 17.6 | - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | - | 60.7 | - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Diode forward voltage | VSD | - | 0.7 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 45 | - | ns | VR=30V, IF=20A, diF/dt=300A/s |
| Reverse recovery charge | Qrr | - | 212 | - | nC | VR=30V, IF=20A, diF/dt=300A/s |
| Peak reverse recovery current | Irrm | - | 8.4 | - | A | VR=30V, IF=20A, diF/dt=300A/s |
2410121452_ANHI-AUA039N10_C18722998.pdf
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