Power Conversion MOSFET ANHI ASD70R380E N Channel Silicon Device with Low Drain Source Resistance
Key Attributes
Model Number:
ASD70R380E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
901pF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASD70R380E
Package:
TO-252
Product Description
Product Overview
The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them ideal for single-ended flyback or two-transistor forward topologies. They are well-suited for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not explicitly stated, but implied by part numbering convention.
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Switching Capability: Easy Gate Control
- Ruggedness: MOSFET dv/dt ruggedness
Technical Specifications
| Part Name | Package | Marking |
|---|---|---|
| ASA70R380E | TO220F | ASA70R380E |
| ASD70R380E | TO252 | ASD70R380E |
| ASB70R380E | TO263 | ASB70R380E |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-Source Breakdown Voltage | VDS @ Tj,max | 750 | V | |
| On-Resistance (max) | RDS(on),max | 380 | m | |
| Total Gate Charge (typ) | Qg,typ | 22 | nC | |
| Pulsed Drain Current | ID,pulse | 33 | A | TC=25C |
| On-State Resistance (typ.) | RDS(on) | 0.346 | VGS=10V, ID=5.5A, Tj=25C | |
| Maximum Ratings | ||||
| Continuous Drain Current | ID | - | 11 | A (TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50) |
| Pulsed Drain Current | ID,pulse | - | 33 | A (TC=25C, Pulse width tp limited by Tj,max) |
| Avalanche Energy, Single Pulse | EAS | - | 624 | mJ |
| MOSFET dv/dt ruggedness | dv/dt | - | 69 | V/ns (VDS=0...400V) |
| Gate Source Voltage (static) | VGS | -20 | 20 | V (static) |
| Gate Source Voltage (dynamic) | VGS | -30 | 30 | V (AC, f>1 Hz) |
| Power Dissipation (TO220F) | Ptot | - | 31 | W (TC=25C) |
| Power Dissipation (TO252&TO263) | Ptot | - | 83 | W (TC=25C) |
| Storage Temperature | Tstg | -55 | 150 | C |
| Operating Junction Temperature | Tj | -55 | 150 | C |
| Reverse diode dv/dt | dv/dt | - | 15 | V/ns (VDS=0...400V, ISD<=48A, Tj=25C) |
| Thermal Characteristics (TO220 FullPAK) | ||||
| Thermal Resistance, Junction-Case | RthJC | - | 4 | C/W |
| Thermal Resistance, Junction-Ambient | RthJA | - | 80 | C/W (device on PCB, minimal footprint) |
| Thermal Characteristics (TO252 and TO263) | ||||
| Thermal Resistance, Junction-Case | RthJC | - | 1.5 | C/W |
| Thermal Resistance, Junction-Ambient | RthJA | - | 62 | C/W (device on PCB, minimal footprint) |
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 705 | - | V (VGS=0V, ID=10mA) |
| Gate Threshold Voltage | V(GS)th | 2.8 | 4.2 | V (VDS=VGS, ID=250uA) |
| Zero Gate Voltage Drain Current | IDSS | - | 100 | nA (VDS=700V, VGS=0V, Tj=25C) |
| Gate-Source Leakage Current | IGSS | - | 100 | nA (VGS=30V, VDS=0V) |
| Drain-Source On-State Resistance | RDS(on) | - | 0.38 | (VGS=10V, ID=5.5A, Tj=25C) |
| Gate Resistance | RG | - | 11.2 | (f=1MHz, open drain) |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | - | 901 | pF (VGS=0V, VDS=50V, f=10kHz) |
| Output Capacitance | Coss | - | 59 | pF (VGS=0V, VDS=50V, f=10kHz) |
| Reverse Transfer Capacitance | Crss | - | 5.3 | pF (VGS=0V, VDS=50V, f=10kHz) |
| Turn-on Delay Time | td(on) | - | 7.2 | ns (VDD=400V, VGS=13V, ID=4.8A, RG=3.4) |
| Rise Time | tr | - | 20.8 | ns (VDD=400V, VGS=13V, ID=4.8A, RG=3.4) |
| Turn-off Delay Time | td(off) | - | 29.2 | ns (VDD=400V, VGS=13V, ID=4.8A, RG=3.4) |
| Fall Time | tf | - | 19.2 | ns (VDD=400V, VGS=13V, ID=4.8A, RG=3.4) |
| Gate Charge Characteristics | ||||
| Gate to Source Charge | Qgs | - | 5.8 | nC (VDD=400V, ID=4.8A, VGS=0 to 10V) |
| Gate to Drain Charge | Qgd | - | 17 | nC (VDD=400V, ID=4.8A, VGS=0 to 10V) |
| Gate Charge Total | Qg | - | 22 | nC (VDD=400V, ID=4.8A, VGS=0 to 10V) |
| Gate Plateau Voltage | Vplateau | - | 5.3 | V (VDD=400V, ID=4.8A, VGS=0 to 10V) |
| Reverse Diode Characteristics | ||||
| Diode Forward Voltage | VSD | - | 0.74 | V (VGS=0V, IF=1A, Tj=25C) |
| Reverse Recovery Time | trr | - | 250 | ns (VR=400V, IF=4.8A, diF/dt=100A/s) |
| Reverse Recovery Charge | Qrr | - | 2.572 | uC (VR=400V, IF=4.8A, diF/dt=100A/s) |
| Peak Reverse Recovery Current | Irrm | - | 19.6 | A (VR=400V, IF=4.8A, diF/dt=100A/s) |
2410121538_ANHI-ASD70R380E_C5440013.pdf
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