1200V silicon carbide mosfet Bestirpower BCW120N21M1 with low on resistance and halogen free design
Key Attributes
Model Number:
BCW120N21M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
21mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.741nF
Pd - Power Dissipation:
469W
Gate Charge(Qg):
198nC
Mfr. Part #:
BCW120N21M1
Package:
TO-247-3L
Product Description
Product Overview
The BCW120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications in solar inverters, EV charging stations, UPS systems, and industrial power supplies. It offers a robust 1200V rating and a low on-resistance of 21m, contributing to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling efforts. Key features include high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability, all tested to ensure reliability. This component is Pb-free, Halogen-free, and RoHS compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Certifications: Pb-free, Halogen Free, RoHS Compliant
- Package Type: TO-247-3L
- Revision: 1.3
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1200 | V | |||
| VGS (DC) | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (VGS=18V, TC = 25) | 100 | A | |||
| ID | Drain Current Continuous (VGS=18V, TC = 100) | 71 | A | |||
| IDM | Drain Current Pulsed (Note 1) | 267 | A | |||
| PD | Power Dissipation (TC = 25) | 468 | W | |||
| Derate Above 25 | 3.1 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS= 0 V | 1.7 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | 2.4 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS= -10 V, VDS= 0 V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS= VDS, ID = 10 mA | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 50 A | 18.8 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 50 A, TJ = 175 | 31.6 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 50 A | 24 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 50 A, TJ = 150 | 28.4 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 50 A, TJ = 175 | 34 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 60A | 19 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 62A, TJ = 150 | 29 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 62A, TJ = 175 | 32.2 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 50 A | 24.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 3683 | pF | ||
| Coss | Output Capacitance | 225 | pF | |||
| Crss | Reverse Capacitance | 26 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 47 | J | ||
| Co(er) | Energy Related Output Capacitance | 146 | pF | |||
| Co(tr) | Time Related Output Capacitance | 446 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V | 209 | nC | ||
| Qgs | Gate to Source Charge | 52 | nC | |||
| Qgd | Gate to Drain Miller Charge | 80 | nC | |||
| RG | Internal Gate Resistance | f = 1MHz, VAC=25mV | 2.7 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V, RG = 2.5 , FWD : BCH120S020D1, Inductive load | 46 | ns | ||
| tr | Turn-On Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 55 | ns | |||
| tf | Turn-Off Fall Time | 12 | ns | |||
| Eon | Turn-on Switching Energy | 1230 | J | |||
| Eoff | Turn-off Switching Energy | 302 | J | |||
| Etot | Total Switching Energy | 1532 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 100 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 250 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 50 A | 4 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 50 A, dIF/dt = 1000 A/s | 60 | ns | ||
| Qrr | Reverse Recovery Charge | 404 | nC | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.32 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
Part Number: BCW120N21M1
Ordering Information:
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCW120N21M1 | BCW120N21M1 | TO247-3L | Tube | 30 units |
2509021810_Bestirpower-BCW120N21M1_C51484235.pdf
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