Super Junction Power MOSFET Bestirpower BMW95N180UE1Z with Low On Resistance and Gate Charge
Key Attributes
Model Number:
BMW95N180UE1Z
Product Custom Attributes
Drain To Source Voltage:
950V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Pd - Power Dissipation:
568W
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
3.125nF
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
BMW95N180UE1Z
Package:
TO-247-3L
Product Description
Product Overview
The BMW95N180UE1Z is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve very low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling, providing advantages such as Low EMI and reduced switching losses for designers. It is ideal for applications including Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), Power Factor Correction (PFC), and Chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Key Parameters | |||||||
| BVDSS @ TJ,max | Drain to Source Breakdown Voltage | TJ,max | 1000 | V | |||
| ID | Drain Current | TC = 25 | 36 | A | Fig 9 | ||
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID = 13 A, TJ = 25 | 160 | 180 | m | Fig 3 | |
| Qg,typ | Total Gate Charge | VDS = 400 V, ID=13 A, VGS = 10 V | 83 | nC | Fig 6 | ||
| Absolute Maximum Ratings | |||||||
| VDSS | Drain to Source Voltage | 950 | V | ||||
| VGSS | Gate to Source Voltage | 30 | V | ||||
| ID | Drain Current Continuous (TC = 25) | 36 | A | Fig 9 | |||
| ID | Drain Current Continuous (TC = 100) | 23 | A | ||||
| IDM | Drain Current Pulsed | (Note1) | 108 | A | |||
| EAS | Single Pulsed Avalanche Energy | (Note2) | 1033 | mJ | |||
| IAS | Avalanche Current | (Note2) | 8.3 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | ||||
| Peak Diode Recovery dv/dt | (Note3) | ||||||
| PD | Power Dissipation (TC = 25) | 568 | W | Fig 10 | |||
| Derate Above 25 | 4.5 | W/ | |||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | ||||
| Thermal Characteristics | |||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.22 | /W | ||||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 26 | /W | ||||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | |||||
| Electrical Characteristics | |||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250 uA | 950 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 950 V, VGS = 0 V | - | - | 10 | A | |
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | - | - | 10 | A | |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250 uA | 3.0 | 4.0 | 5.0 | V | Fig 8 |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 13 A, TJ = 25 | - | 160 | 180 | m | Fig 3 |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 13 A, TJ = 150 | - | 425 | 468 | m | Fig 7 |
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 100kHz | - | 3125 | - | pF | Fig 5 |
| Coss | Output Capacitance | - | 60 | - | pF | ||
| Crss | Reverse transfer capacitance | - | 7 | - | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VDS = 400 V, ID=13 A, VGS = 10 V | - | 83 | - | nC | Fig 6 |
| Qgs | Gate to Source Charge | - | 17 | - | nC | ||
| Qgd | Gate to Drain Miller Charge | - | 39 | - | nC | ||
| RG | Gate Resistance | f = 1 MHz, Open Drain | - | 6.9 | - | ||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 13 A, VGS = 10 V, RG = 4.7 | - | 7 | - | ns | |
| tr | Turn-On Rise Time | - | 10.5 | - | ns | ||
| td(off) | Turn-Off Delay Time | - | 19.3 | - | ns | ||
| tf | Turn-Off Fall Time | - | 15 | - | ns | ||
| Source-Drain Diode Characteristics | |||||||
| IS | Maximum Continuous Diode Forward Current | - | - | 36 | A | ||
| ISM | Maximum Pulsed Diode Forward Current | - | - | 108 | A | ||
| VSD | Diode Forward Voltage | VGS = 0 V, ISD = 13 A | - | 0.9 | 1.2 | V | Fig 4 |
| trr | Reverse Recovery Time | VDD = 600 V, ISD = 13 A, dIF/dt = 100 A/s | - | 193 | - | ns | |
| Qrr | Reverse Recovery Charge | - | 1.6 | - | C | ||
| Package Information | |||||||
| Package Type | TO247-3L | ||||||
| Packing Method | Tube | ||||||
| Quantity | 30 units | ||||||
2506261031_Bestirpower-BMW95N180UE1Z_C49164816.pdf
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