Small SOT 23 package and RoHS compliant ARK micro DMZ42C10S 100V N Channel Depletion Mode Power MOSFET
Key Attributes
Model Number:
DMZ42C10S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@0V
Gate Threshold Voltage (Vgs(th)):
2.9V@50uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.9pF
Output Capacitance(Coss):
25.6pF
Input Capacitance(Ciss):
90pF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
2.43nC
Mfr. Part #:
DMZ42C10S
Package:
SOT-23
Product Description
Product Overview
The DMZ42C10S is a 100V N-Channel Depletion-Mode Power MOSFET from ARK Microelectronics Co., Ltd. It features a normally-on characteristic, excellent temperature stability, extremely low leakage current, and fast switching speeds, making it suitable for a wide range of applications including ignition modules, normally-on switches, solid-state relays, converters, security systems, power supplies, smart transmitters, and constant current sources. Its small SOT-23 package and RoHS compliance further enhance its utility.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China (implied by company address)
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | 100 | V | TA=25 unless otherwise specified [1] | ||
| Continuous Drain Current | ID | 0.2 | A | TA=25 unless otherwise specified | ||
| Pulsed Drain Current | IDM | 0.8 | A | TA=25 unless otherwise specified [2] | ||
| Power Dissipation | PD | 0.5 | W | TA=25 unless otherwise specified | ||
| Gate-to-Source Voltage | VGS | ±20 | V | TA=25 unless otherwise specified | ||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 250 | /W | |||
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 100 | V | VGS=-10V, ID=250µA | ||
| Drain-to-Source Leakage Current | ID(OFF) | 0.1 | µA | VDS=100V, VGS=-10V Tj=25 | ||
| 10 | V | VDS=100V, VGS=-10V Tj=125 | ||||
| Gate-to-Source Leakage Current | IGSS | 10 | nA | VGS=20V, VDS=0V | ||
| -10 | VGS=-20V, VDS=0V | |||||
| ON Characteristics | ||||||
| Saturated Drain-to-Source Current | IDSS | 90 | mA | VGS=0V, VDS=10V | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 6 | Ω | VGS=0V, ID=50mA [3] | ||
| 1.2 | 5 | Ω | VGS=10V, ID=190mA [3] | |||
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -2.9 | -1.8 | V | VDS=3V, ID=50µA | |
| Forward Transconductance | gfs | 400 | mS | VDS=10V, ID=150mA | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 90.0 | pF | VGS=-10V VDS=25V f=1.0MHz | ||
| Output Capacitance | Coss | 25.6 | pF | |||
| Reverse Transfer Capacitance | Crss | 4.9 | pF | |||
| Total Gate Charge | Qg | 2.43 | nC | VGS=-3V~7V VDS=80V ID=120mA | ||
| Gate-to-Source Charge | Qgs | 0.35 | ||||
| Gate-to-Drain (Miller) Charge | Qgd | 0.68 | ||||
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | 3.0 | ns | VGS=-3V~7V VDD=50V ID=120mA RG=6Ω | ||
| Rise Time | trise | 2.8 | ns | |||
| Turn-off Delay Time | td(off) | 13.5 | ns | |||
| Fall Time | tfall | 100 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | 1.2 | V | ISD=190mA, VGS=-10V | ||
2504101957_ARK-micro-DMZ42C10S_C46532090.pdf
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