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quality AUP033N08BG N Channel MOSFET Offering Low Gate Charge and High Speed Switching for Power Electronics factory
quality AUP033N08BG N Channel MOSFET Offering Low Gate Charge and High Speed Switching for Power Electronics factory

AUP033N08BG N Channel MOSFET Offering Low Gate Charge and High Speed Switching for Power Electronics

Key Attributes
Model Number: AUP033N08BG
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.3mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
43.4pF
Pd - Power Dissipation:
370W
Input Capacitance(Ciss):
7.463nF
Gate Charge(Qg):
109nC
Mfr. Part #:
AUP033N08BG
Package:
TO-220
Product Description

Product Overview

The AUB033N08BG, AUP033N08BG, and AUW033N08BG are N-Channel MOSFETs designed for synchronous rectification and hard switching applications in DC/DC converters. They are suitable for high-speed circuits, telecommunications, and industrial applications. Key features include low drain-source on-resistance, high-speed switching capability, enhanced body diode ruggedness, and avalanche ruggedness.

Product Attributes

  • Brand: AUB/AUP/AUW
  • Channel Type: N-Channel
  • Technology: MOSFET

Technical Specifications

Model Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
AUB033N08BG AUB033N08 TO263 AUB033N08BG 85 3.3 109 640
AUP033N08BG AUP033N08 TO220 AUP033N08BG 85 3.3 109 640
AUW033N08BG AUW033N08 TO247 AUW033N08BG 85 3.3 109 640
Parameter Symbol Value (Typ.) Unit Condition
Drain-source breakdown voltage V(BR)DSS 85 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 3.5 V VDS=VGS, ID=250uA
Drain-source on-state resistance RDS(on) 2.9 m VGS=10V, ID=20A, Tj=25C
Gate charge total Qg 109 nC VDS=40V, VGS=0 to 10V, ID=20A
Continuous drain current ID 115 A TC=100C
Pulsed drain current ID,pulse 640 A TC=25C
Avalanche energy, single pulse EAS 884 mJ
Gate source voltage (static) VGS 20 V static
Power dissipation (TO220) Ptot 370 W TC=25C
Power dissipation (TO263) Ptot 179 W TC=25C
Power dissipation (TO247) Ptot 340 W TC=25C
Storage temperature Tstg -55 to 175 C
Operating junction temperature Tj -55 to 175 C
Thermal resistance, junction-case (TO220) RthJC 0.42 C/W
Thermal resistance, junction-ambient (TO220) RthJA 62 C/W device on PCB, minimal footprint
Thermal resistance, junction-case (TO263) RthJC 0.7 C/W
Thermal resistance, junction-ambient (TO263) RthJA 62 C/W device on PCB, minimal footprint
Thermal resistance, junction-case (TO247) RthJC 0.44 C/W
Thermal resistance, junction-ambient (TO247) RthJA 40 C/W device on PCB, minimal footprint
Diode forward voltage VSD 0.67 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 52 ns VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge Qrr 137 uC VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current Irrm -3.7 A VR=40V,IF=20A,diF/dt=200A/us

2410121538_ANHI-AUP033N08BG_C5440028.pdf

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