650V 11A Super Junction Power MOSFET Bestirpower BMB65N380E2 with Low On Resistance and Gate Charge
Key Attributes
Model Number:
BMB65N380E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Number:
1 N-channel
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
801pF
Output Capacitance(Coss):
28pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BMB65N380E2
Package:
D2PAK
Product Description
Product Overview
The BMB65N380E2 is a 650V, 11A Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve very low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency. The device offers reduced switching and conduction losses, lower switching noise, and is 100% avalanche tested. Its user-friendly nature and Low EMI characteristics make it ideal for applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and Chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
- Package Type: D2PAK
- Origin: (Not specified in text)
- Material: (Not specified in text)
- Color: (Not specified in text)
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| Model | BMB65N380E2 | - | - |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | TJ,max |
| Continuous Drain Current (ID) | 11 | A | VGS=10V, TC = 25 |
| Static Drain to Source On Resistance (RDS(on),max) | 380 | m | VGS = 10 V, ID = 4.8 A, TJ = 25 |
| Total Gate Charge (Qg,typ) | 19 | nC | VDS = 400 V, ID=5.5 A, VGS = 10 V |
| Drain to Source Voltage (VDSS) | 650 | V | - |
| Gate to Source Voltage (VGSS) | 30 | V | - |
| Drain Current Pulsed (IDM) | 33 | A | (Note 1) |
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | (Note 2) |
| Avalanche Current (IAS) | 7 | A | (Note 2) |
| MOSFET dv/dt | 50 | V/ns | - |
| Peak Diode Recovery dv/dt | 15 | V/ns | (Note 3) |
| Power Dissipation (PD) | 114 | W | TC = 25 |
| Derate Above 25 | 0.9 | W/ | - |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | - | |
| Thermal Resistance, Junction to Case (RJC) | 1.1 | /W | Max. |
| Thermal Resistance, Junction to Ambient (RJA) | 62 | /W | Max. |
| Soldering Temperature (Tsold) | 260 | Wave soldering only allowed at leads | |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | VGS = 0 V, ID = 250 uA |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 650 V, VGS = 0 V |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS = 30 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VGS = VDS, ID = 250 uA |
| Static Drain to Source On Resistance (RDS(on)) | 325 - 380 | m | VGS = 10 V, ID = 4.8 A, TJ = 25 |
| Static Drain to Source On Resistance (RDS(on)) | 813 - 950 | m | VGS = 10 V, ID = 4.8 A, TJ = 150 |
| Input Capacitance (Ciss) | 801 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz |
| Output Capacitance (Coss) | 28 | pF | - |
| Reverse transfer capacitance (Crss) | 3.8 | pF | - |
| Total Gate Charge (Qg(tot)) | 19 | nC | VDS = 400 V, ID=5.5 A, VGS = 10 V |
| Gate to Source Charge (Qgs) | 2.9 | nC | - |
| Gate to Drain Miller Charge (Qgd) | 9.7 | nC | - |
| Gate Resistance (RG) | 5.6 | f = 1 MHz, Open Drain | |
| Turn-On Delay Time (td(on)) | 16 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 |
| Turn-On Rise Time (tr) | 6 | ns | - |
| Turn-Off Delay Time (td(off)) | 29 | ns | - |
| Turn-Off Fall Time (tf) | 22 | ns | - |
| Maximum Continuous Diode Forward Current (IS) | 11 | A | - |
| Maximum Pulsed Diode Forward Current (ISM) | 33 | A | - |
| Diode Forward Voltage (VSD) | 0.9 - 1.2 | V | VGS = 0 V, ISD = 11 A |
| Reverse Recovery Time (trr) | 198 | ns | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s |
| Reverse Recovery Charge (Qrr) | 1.93 | C | - |
| Package Dimensions | D2PAK | mm | (See Page 8) |
| Packing Method | Tape & Reel | - | 800 units |
2506162235_Bestirpower-BMB65N380E2_C49164817.pdf
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