Power Management P Channel Enhancement Mode MOSFET ANPEC APM2301CAC TRG with Low On State Resistance
Key Attributes
Model Number:
APM2301CAC-TRG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
580pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
830mW
Gate Charge(Qg):
7nC
Mfr. Part #:
APM2301CAC-TRG
Package:
SOT-23
Product Description
Product Overview
The APM2301CA is a P-Channel Enhancement Mode MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. It offers reliable and rugged performance with low on-state resistance (RDS(ON)) at various gate-source voltages. This device is available in lead-free and green (RoHS compliant and halogen-free) options, ensuring environmental compliance.
Product Attributes
- Brand: SINOPOWER
- Product Type: P-Channel Enhancement Mode MOSFET
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | -20 | V | |||
| VGSS | Gate-Source Voltage | ±12 | V | |||
| ID * | Continuous Drain Current | -3 | A | |||
| IDM * | 300µs Pulsed Drain Current | VGS=-4.5V | -12 | A | ||
| IS * | Diode Continuous Forward Current | -1.3 | A | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -55 | 150 | °C | ||
| PD * | Maximum Power Dissipation | TA=25°C | 0.83 | W | ||
| PD * | Maximum Power Dissipation | TA=100°C | 0.3 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 75 | °C/W | |||
| RθJA * | Thermal Resistance-Junction to Ambient | 150 | °C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | -20 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=-16V, VGS=0V | - | - | -1 | µA |
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | - | - | -30 | µA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, IDS=-250µA | -0.5 | -0.75 | -1 | V |
| IGSS | Gate Leakage Current | VGS=±12V, VDS=0V | - | - | ±10 | µA |
| RDS(ON) a | Drain-Source On-State Resistance | VGS=-4.5V, IDS=-3A | - | 56 | 70 | mΩ |
| VGS=-2.5V, IDS=-2A | - | 85 | 115 | mΩ | ||
| VGS=-1.8V, IDS=-1A | - | 135 | 250 | mΩ | ||
| VSD a | Diode Forward Voltage | ISD=-1.3A, VGS=0V | - | -0.75 | -1.3 | V |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=-10V, VGS=-4.5V, IDS=-3A | - | 7 | 10 | nC |
| Qgs | Gate-Source Charge | - | 1.9 | - | nC | |
| Qgd | Gate-Drain Charge | - | 1.9 | - | nC | |
| Dynamic Characteristics | ||||||
| Ciss b | Input Capacitance | VGS=0V, VDS=-10V, Frequency=1.0MHz | - | 580 | - | pF |
| Coss b | Output Capacitance | - | 100 | - | pF | |
| Crss b | Reverse Transfer Capacitance | - | 75 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω | - | 4 | 7 | ns |
| tr | Turn-on Rise Time | - | 13 | 23 | ns | |
| td(OFF) | Turn-off Delay Time | - | 35 | 63 | ns | |
| tf | Turn-off Fall Time | - | 20 | 36 | ns | |
| trr | Reverse Recovery Time | ISD=-3A, dlSD/dt =100A/µs | - | 20 | - | ns |
| Qrr | Reverse Recovery Charge | - | 7 | - | nC | |
Notes:
- * Surface Mounted on 1in² pad area, t ≤ 10sec.
- a Pulse test; pulse width≤300µs, duty cycle≤2%.
- b Guaranteed by design, not subject to production testing.
2511271044_ANPEC-APM2301CAC-TRG_C60715.pdf
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