Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability

Name: Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BL3N150-B
Availability: InStock

Key Attributes

Model Number: BL3N150-B

Product Custom Attributes

Drain To Source Voltage:

1.5kV

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

5.8Ω@10V,1.5A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

4.7pF@25V

Number:

1 N-channel

Input Capacitance(Ciss):

1.45nF@25V

Pd - Power Dissipation:

140W

Gate Charge(Qg):

36nC@10V

Mfr. Part #:

BL3N150-B

Package:

TO-263

Product Description

Product Overview

The BL3N150 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. Key features include fast switching, low Crss, 100% avalanche testing, and improved dv/dt capability, making it a robust choice for demanding applications. This RoHS-compliant product is available in various package types to suit different design requirements.

Product Attributes

Brand: Belling
Product Type: Power MOSFET
Channel Type: N-channel
Technology: Enhanced MOSFET
Certifications: RoHS

Technical Specifications

Parameter	Value	Unit	Notes
Drain-to-Source Voltage (VDS)	1500	V
Continuous Drain Current (ID)	3	A
Continuous Drain Current (ID) at TC = 100 C	1.7	A
Pulsed Drain Current (IDM)	12	A	Pulse width limited by maximum junction temperature
Gate-to-Source Voltage (VGS)	±30	V
Single Pulse Avalanche Energy (EAS)	450	mJ	IDS=2.5A, VDD=50V, Start TJ=25
Peak Diode Recovery dv/dt	5.0	V/ns	ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25
Power Dissipation (PD) - TO-220, TO-3PN, TO-247, TO-263	140	W
Derating Factor above 25C (for TO-220, TO-3PN, TO-247, TO-263)	1.1	W/
Power Dissipation (PD) - TO-220F, TO-3PF	62.5	W
Derating Factor above 25C (for TO-220F, TO-3PF)	0.5	W/
Operating Junction and Storage Temperature Range (TJ, Tstg)	-55 to 150
Maximum Temperature for Soldering (TL)	300
Junction-to-Case Thermal Resistance (RJC) - No FullPAK	0.89	/W
Junction-to-Ambient Thermal Resistance (RJA) - No FullPAK	62.5	/W
Junction-to-Case Thermal Resistance (RJC) - FullPAK	2	/W
Junction-to-Ambient Thermal Resistance (RJA) - FullPAK	62.5	/W
Drain to Source Breakdown Voltage (VDS)	1500	V	VGS=0V, ID=250µA
Drain to Source Leakage Current (IDSS) at VDS =1500V, VGS= 0V, Tj = 25	--	µA	Max: 10
Drain to Source Leakage Current (IDSS) at VDS =1200V, VGS= 0V, Tj = 125	--	µA	Max: 500
Gate to Source Forward Leakage (IGSS(F)) at VGS =+30V	--	nA	Max: 100
Gate to Source Reverse Leakage (IGSS(R)) at VGS =-30V	--	nA	Max: 100
Drain-to-Source On-Resistance (RDS(ON))	5.8	Ω	VGS=10V, ID=1.5A, Typ. (Max: 8)
Gate Threshold Voltage (VGS(TH))	3.0	V	VDS = VGS, ID = 250µA, Min. (Max: 5.0)
Gate resistance (Rg)	3	Ω	f = 1.0MHz, Typ.
Input Capacitance (Ciss)	1450	PF	VGS = 0V, VDS = 25V, f = 1.0MHz, Typ.
Output Capacitance (Coss)	87.5	PF	Typ.
Reverse Transfer Capacitance (Crss)	4.7	PF	Typ.
Turn-on Delay Time (td(ON))	25	ns	ID =1.25A, VDD = 750V, VGS = 10V, RG =5Ω, Typ.
Rise Time (tr)	46	ns	Typ.
Turn-Off Delay Time (td(OFF))	45	ns	Typ.
Fall Time (tf)	60	ns	Typ.
Total Gate Charge (Qg)	36	nC	ID =3A, VDD =1000V, VGS = 10V, Typ.
Gate to Source Charge (Qgs)	11	nC	Typ.
Gate to Drain (Miller)Charge (Qgd)	14	nC	Typ.
Continuous Source Current (Body Diode) (IS)	3	A	TC=25 °C
Maximum Pulsed Current (Body Diode) (ISM)	12	A
Diode Forward Voltage (VSD)	1.2	V	IS=3A, VGS=0V, Typ.
Reverse Recovery Time (Trr)	405	ns	IS=2.5A, Tj = 25°C, dIF/dt=100A/us, VGS=0V, Typ.
Reverse Recovery Charge (Qrr)	2400	nC	Typ.
Reverse Recovery Current (Irrm)	11.8	A	Typ.

Available Packages

Ordering Code	Package Type	Packing
BL3N150-P	TO-220	Tube
BL3N150-A	TO-220F	Tube
BL3N150-W	TO-3PN	Tube
BL3N150-K	TO-3PF	Tube
BL3N150-F	TO-247	Tube
BL3N150-B	TO-263	Reel

Package Dimensions (mm)

TO-220F Package

Item	MIN	MAX
A	9.60	10.40
B	15.40	16.20
B1	8.90	9.50
C	4.30	4.90
C1	2.10	3.00
D	2.40	3.00
E	0.60	1.00
F	0.30	0.60
G	1.12	1.42
H	3.40	3.80
I	1.60	2.90
L	12.00	14.00
N	2.34	2.74
Q	3.15	3.55
P	2.90	3.30

TO-220 Package

Item	MIN	MAX
A	9.60	10.60
B	15.00	16.00
B1	8.90	9.50
C	4.30	4.80
C1	2.30	3.10
D	1.20	1.40
E	0.70	0.90
F	0.30	0.60
G	1.17	1.37
H	2.70	3.80
L	12.60	14.80
N	2.34	2.74
Q	2.40	3.00
P	3.50	3.90

TO-3PN Package

Item	MIN	MAX
A	15.00	16.00
B	19.20	20.60
C	4.60	5.00
D	1.40	1.60
E	0.90	1.10
F	0.50	0.70
G1	2.00	2.20
G2	3.00	3.20
H	3.00	3.70
I	1.20	1.70
J	2.70	2.90
L	19.00	21.00
N	5.25	5.65
P	3.10	3.30

TO-3PF Package

Item	MIN	MAX
A	4.60	5.20
A1	2.20	2.60
B	0.90	1.40
B1	1.75	2.35
B2	1.75	2.15
B3	2.80	3.35
B4	2.80	3.15
C	0.50	0.70
D	20.60	21.30
D1	16.00	18.00
E	15.50	16.10
E1	13.00	14.70
E2	3.80	5.30
E3	0.80	2.60
e	5.20	5.70
L	19.00	20.50
L1	3.90	4.60
ΦP	3.30	3.70
Q	5.20	6.00
S	5.80	6.60

TO-247 Package

Item	MIN	MAX
A	19.70	20.10
B	15.35	15.75
C	5.30	5.70
D	20.80	21.20
E	5.80	6.20
e	5.44	5.50
F	1.20	1.40
G	1.00	1.40
H	21.70	22.10
I	4.90	5.30
J	2.40	2.80
K	15.00	15.40
L	2.20	2.60
M	2.80	3.20
N	1.60	2.00
O	0.40	0.60
P	3.60	4.00
Q	5.70	6.10
R	15.70	16.10
S	6.00	6.40
T	4.50	4.90
U	2.60	3.00
V	0.20	0.60

TO-263 Package

Item	MIN	MAX
A	9.80	10.40
B	8.90	9.50
B1	0.00	0.10
C	4.40	4.80
D	1.16	1.37
E	0.70	0.95
F	0.30	0.60
G	1.07	1.47
H	1.30	1.80
K	0.95	1.37
L1	14.50	16.50
L2	1.60	2.30
I	0.00	0.20
Q	0°	8°
R	0.40
N	2.39	2.69

Note: Exceeding the maximum ratings of the device may cause damage or permanent failure. Always ensure circuit designs do not exceed the absolute maximum ratings.

2410121247_BL-BL3N150-B_C7436531.pdf

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