Soft recovery diode 650V 10A AlphaIGBT AOS AOB10B65M1 suitable for sewing machines fan and home appliances
Key Attributes
Model Number:
AOB10B65M1
Product Custom Attributes
Td(off):
91ns
Pd - Power Dissipation:
150W
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
25pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
24nC@15V
Pulsed Current- Forward(Ifm):
30A
Reverse Recovery Time(trr):
263ns
Switching Energy(Eoff):
130uJ
Turn-On Energy (Eon):
180uJ
Mfr. Part #:
AOB10B65M1
Package:
TO-263
Product Description
Product Overview
The AOT10B65M1/AOB10B65M1 is a 650V, 10A Alpha IGBT featuring a soft and fast recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology, offering a 650V breakdown voltage and a very fast and soft recovery freewheeling diode. It provides high efficient turn-on di/dt controllability, low VCE(SAT) for high efficiencies, and low turn-off switching loss with softness. The IGBT also boasts very good EMI behavior and high short-circuit ruggedness. It is suitable for applications such as Motor Drives, Sewing Machines, Home Appliances, Fan, Pumps, Vacuum Cleaners, and other Hard Switching Applications.
Product Attributes
- Brand: AOS
- Technology: AlphaIGBT ( IGBT)
Technical Specifications
| Parameter | Conditions | AOT10B65M1/AOB10B65M1 | Units |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage | TA=25C unless otherwise noted | 650 | V |
| Collector-Emitter Breakdown Voltage | 650 | V | |
| Gate-Emitter Voltage | 30 | V | |
| Continuous Collector Current | TC=25C | 30 | A |
| TC=100C | 10 | A | |
| Pulsed Collector Current | Limited by TJmax | 30 | A |
| Continuous Diode Forward Current | TC=25C | 20 | A |
| TC=100C | 10 | A | |
| Diode Pulsed Current | Limited by TJmax | 30 | A |
| Power Dissipation | TC=25C | 300 | W |
| Short circuit withstanding time | 1) VGE=15V, VCC400V, TJ175C | 5 | ms |
| Junction and Storage Temperature Range | -55 to 175 | C | |
| Maximum lead temperature for soldering purpose | 1/8" from case for 5 seconds | 150 | C |
| Thermal Characteristics | |||
| Maximum IGBT Junction-to-Case | 1.6 | C/W | |
| Maximum Diode Junction-to-Case | 3.3 | C/W | |
| Maximum Junction-to-Ambient | 65 | C/W | |
| Electrical Characteristics (TJ=25C unless otherwise noted) | |||
| Collector-Emitter Saturation Voltage | VGE=15V, IC=10A | 1.6 | V |
| TJ=125C | 1.86 | V | |
| TJ=175C | 2.02 | V | |
| VGE=15V, IC=10A | 1.9 | V | |
| TJ=125C | 1.96 | V | |
| TJ=175C | 1.91 | V | |
| Gate-Emitter Threshold Voltage | VCE=20V, IC=1mA | 4.5 - 5.7 | V |
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V | 10 | mA |
| TJ=125C | 100 | mA | |
| TJ=175C | 1000 | mA | |
| Gate-Emitter leakage current | VGE=0V, VCE=30V | 100 | nA |
| Diode Forward Voltage | IF=10A, TJ=25C | 1.9 | V |
| TJ=175C | 1.91 | V | |
| IF=10A, TJ=25C | 2.4 | V | |
| TJ=175C | 1.91 | V | |
| Dynamic Parameters | |||
| Input Capacitance | VGE=0V, VCC=25V, f=1MHz | 655 | pF |
| Output Capacitance | VCE=20V, IC=10A | 68 | pF |
| Reverse Transfer Capacitance | VCE=5V, IC=1mA | 25 | pF |
| Total Gate Charge | VGE=15V, VCC=520V, IC=10A | 24 | nC |
| Gate to Emitter Charge | 5.5 | nC | |
| Gate to Collector Charge | 12 | nC | |
| Short circuit collector current | VGE=15V, VCC=400V, tsc5us, TJ175C | 70 | A |
| Gate resistance | VGE=0V, VCC=0V, f=1MHz | 5.8 | |
| Switching Parameters (Load Inductive, TJ=25C) | |||
| Turn-On Delay Time | VGE=15V, VCC=400V, IC=10A, RG=30W | 12 | ns |
| Turn-On Rise Time | 16 | ns | |
| Turn-Off Delay Time | 91 | ns | |
| Turn-Off Fall Time | 14 | ns | |
| Turn-On Energy | 0.18 | mJ | |
| Turn-Off Energy | 0.13 | mJ | |
| Total Switching Energy | 0.31 | mJ | |
| Switching Parameters (Load Inductive, TJ=175C) | |||
| Turn-On Delay Time | VGE=15V, VCC=400V, IC=10A, RG=30W | 10 | ns |
| Turn-On Rise Time | 17 | ns | |
| Turn-Off Delay Time | 111 | ns | |
| Turn-Off Fall Time | 26 | ns | |
| Turn-On Energy | 0.2 | mJ | |
| Turn-Off Energy | 0.23 | mJ | |
| Total Switching Energy | 0.43 | mJ | |
| Diode Reverse Recovery Parameters (TJ=25C) | |||
| Diode Reverse Recovery Time | IF=10A, di/dt=200A/ms, VCC=400V | 263 | ns |
| Diode Reverse Recovery Charge | 0.4 | mC | |
| Diode Peak Reverse Recovery Current | 3.8 | A | |
| Diode Reverse Recovery Parameters (TJ=175C) | |||
| Diode Reverse Recovery Time | IF=10A, di/dt=200A/ms, VCC=400V | 262 | ns |
| Diode Reverse Recovery Charge | 0.7 | mC | |
| Diode Peak Reverse Recovery Current | 5 | A | |
| Package Type & Orderable Part Number | |||
| Package Type | TO220 / TO-263 D2PAK | ||
| Form | Tube | 1000 | Minimum Order Quantity |
| Tape & Reel | 800 | Minimum Order Quantity | |
| Orderable Part Number | AOT10B65M1 / AOB10B65M1 | ||
2410121849_AOS-AOB10B65M1_C5299864.pdf
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