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quality 650V IGBT AOS AOD5B65M1 featuring low VCE SAT and excellent EMI behavior for hard switching applications factory
quality 650V IGBT AOS AOD5B65M1 featuring low VCE SAT and excellent EMI behavior for hard switching applications factory

650V IGBT AOS AOD5B65M1 featuring low VCE SAT and excellent EMI behavior for hard switching applications

Key Attributes
Model Number: AOD5B65M1
Product Custom Attributes
Td(off):
106ns
Pd - Power Dissipation:
28W
Td(on):
8.5ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
13pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@1mA
Gate Charge(Qg):
14nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
195ns
Switching Energy(Eoff):
70uJ
Turn-On Energy (Eon):
80uJ
Pulsed Current- Forward(Ifm):
15A
Output Capacitance(Coes):
36pF
Mfr. Part #:
AOD5B65M1
Package:
TO-252
Product Description

Product Overview

The AOD5B65M1 is a 650V, 5A Alpha IGBT featuring a fast and soft recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology and offers a 650V breakdown voltage. It is designed for high efficiency with low VCE(SAT) and low turn-off switching loss, while also providing excellent EMI behavior and high short-circuit ruggedness. Ideal for motor drives, home appliances (refrigerators, washing machines), fans, pumps, vacuum cleaners, and other hard switching applications.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Technology: AlphaIGBT ( IGBT)
  • Package Type: TO-252 (DPAK)
  • Moisture Level: Level 1
  • Product Categorization: Consumer Market

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
Collector-Emitter Breakdown Voltage BVCES TJ=25C 650 - - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=25C, IC=5A, VGE=15V - 1.57 1.98 V
Collector-Emitter Saturation Voltage VCE(sat) TJ=125C, IC=5A, VGE=15V - 1.87 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=150C, IC=5A, VGE=15V - 1.95 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=25C, IC=10A, VGE=15V - 1.8 2.25 V
Collector-Emitter Saturation Voltage VCE(sat) TJ=125C, IC=10A, VGE=15V - 1.79 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=150C, IC=10A, VGE=15V - 1.75 - V
Gate-Emitter Threshold Voltage VGE(th) IC=1mA, VCE=5V - 5.1 - V
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=25C - - 10 A
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=125C - - 100 A
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=150C - - 500 A
Gate-Emitter Leakage Current IGES VGE=30V - - 100 nA
Diode Forward Voltage VF IF=5A, TJ=25C - 1.8 2.25 V
Diode Forward Voltage VF IF=5A, TJ=125C - 1.79 - V
Diode Forward Voltage VF IF=5A, TJ=150C - 1.75 - V
Continuous Collector Current IC TC=25C - - 15 A
Continuous Collector Current IC TC=100C - - 10 A
Continuous Diode Forward Current IF TC=25C - - 10 A
Continuous Diode Forward Current IF TC=100C - - 5 A
Pulsed Collector Current ICM Limited by TJmax - - 15 A
Pulsed Collector Current ILM Limited by TJmax - - 15 A
Diode Pulsed Current IFM Limited by TJmax - - 15 A
Collector-Emitter Voltage VCE - - - 650 V
Gate-Emitter Voltage VGE - -30 - +30 V
Power Dissipation PD TC=25C - - 69 W
Short circuit withstanding time tSC VGE=15V, VCC400V, TJ150C - - 5 s
Junction and Storage Temperature Range TJ, TSTG - -55 - 150 C
Maximum IGBT Junction-to-Case Thermal Resistance RJC - - 1.8 - C/W
Maximum Diode Junction-to-Case Thermal Resistance RJC - - 5.5 - C/W
Maximum Junction-to-Ambient Thermal Resistance RJA - - 55 - C/W
Lead temperature for soldering purpose, 1/8" from case for 5 seconds TL - - - 300 C
Minimum Order Quantity - - 2500 - - pcs
Orderable Part Number - - AOD5B65M1 - - -

2410121614_AOS-AOD5B65M1_C176752.pdf

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