1350V 20A Alpha IGBT AOS AOK20B135E1 with integrated diode offering low switching loss and reduced EMI
Key Attributes
Model Number:
AOK20B135E1
Product Custom Attributes
Td(off):
134ns
Pd - Power Dissipation:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
58nC
Operating Temperature:
-55℃~+175℃@(Tj)
Turn-On Energy (Eon):
-
Mfr. Part #:
AOK20B135E1
Package:
TO-247
Product Description
Product Overview
The AOK20B135E1 is a 1350V, 20A Alpha IGBT with an integrated diode, featuring the latest AlphaIGBT ( IGBT) technology. It offers best-in-class VCE(SAT) for high efficiencies, low turn-off switching loss due to fast turn-off times, and very smooth turn-off current waveforms that reduce EMI. This IGBT also provides better thermal management and high surge current capability with minimal gate spike due to high input capacitance. It is designed and qualified for consumer market applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications.
Product Attributes
- Brand: AOS (Alpha & Omega Semiconductor)
- Technology: Alpha IGBT ( IGBT)
- Package Type: TO247
- Qualification: Consumer Market
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | V CE | 1350 | V | |||
| Gate-Emitter Voltage | V GE | 30 | V | |||
| Continuous Collector Current | I C | TC=100C | 20 | A | ||
| Continuous Diode Forward Current | I F | TC=25C | 40 | A | ||
| Continuous Diode Forward Current | I F | TC=100C | 20 | A | ||
| Pulsed Collector Current, Limited by TJmax | I CSM | 80 | A | |||
| Diode Pulsed Current, Limited by TJmax | I Fpulse | 200 | A | |||
| Capacitor charging saturation current limited by Tjmax & tp<3s | I LM | Note A | 250 | A | ||
| Turn off SOA, VCE 600V, Limited by TJmax | 80 | A | ||||
| Junction and Storage Temperature Range | T J , T STG | -55 | 175 | C | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | T L | 300 | C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | R JC | TC=25C | 0.6 | C/W | ||
| Maximum IGBT Junction-to-Case | R JC | TC=100C | 0.8 | C/W | ||
| Maximum Junction-to-Ambient | R JA | 40 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BV CES | VGE=0V, IC=1mA | 1350 | V | ||
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=25C | 1.8 | 2.3 | V | |
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=125C | 2.2 | V | ||
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=175C | 2.5 | V | ||
| Gate-Emitter Threshold Voltage | V GE(th) | IC=1mA, VCE=5V | 4.5 | 5.15 | 5.8 | V |
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=25C | 10 | A | ||
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=125C | 500 | A | ||
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=175C | 5000 | A | ||
| Gate-Emitter leakage current | I GES | VGE=30V | 100 | nA | ||
| Diode Forward Voltage | V F | IF=20A, TJ=25C | 1.6 | 2 | V | |
| Diode Forward Voltage | V F | IF=20A, TJ=125C | 1.68 | V | ||
| Diode Forward Voltage | V F | IF=20A, TJ=175C | 1.7 | V | ||
| Dynamic Parameters | ||||||
| Input Capacitance | C ies | VGE=0V, VCE=25V, f=1MHz | 1455 | pF | ||
| Output Capacitance | C oes | VGE=0V, VCE=25V, f=1MHz | 86 | pF | ||
| Reverse Transfer Capacitance | C res | VGE=0V, VCE=25V, f=1MHz | 27 | pF | ||
| Total Gate Charge | Q g | VCE=20V, IC=20A | 58 | nC | ||
| Gate to Emitter Charge | Q ge | VCE=20V, IC=20A | 13 | nC | ||
| Gate to Collector Charge | Q gc | VCE=20V, IC=20A | 28 | nC | ||
| Forward Transconductance | g FS | VDS=20V, ID=20A | 21 | S | ||
| Gate resistance | R g | VCE=0V, VGE=0V, f=1MHz | 2.1 | |||
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-Off Delay Time | t D(off) | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 134 | ns | ||
| Turn-Off Fall Time | t f | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 112 | ns | ||
| Turn-Off Energy | E off | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 0.8 | mJ | ||
| Switching Parameters (Load Inductive, TJ=175C) | ||||||
| Turn-Off Delay Time | t D(off) | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 157 | ns | ||
| Turn-Off Fall Time | t f | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 154 | ns | ||
| Turn-Off Energy | E off | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 1.26 | mJ | ||
2411192322_AOS-AOK20B135E1_C17691629.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
