263 package ARK micro DMB16C20A 200V N Channel Depletion Mode Power MOSFET with halogen free option
Key Attributes
Model Number:
DMB16C20A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@0V,8A
Gate Threshold Voltage (Vgs(th)):
4.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
83pF
Output Capacitance(Coss):
545pF
Input Capacitance(Ciss):
10.2nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
130nC@6V~6V
Mfr. Part #:
DMB16C20A
Package:
TO-263
Product Description
Product Overview
The DMB16C20A is a 200V N-Channel Depletion-Mode Power MOSFET from ARK Microelectronics. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering fast switching speeds and high power density. This device is designed for applications requiring surge current suppression, start-up circuits, converters, synchronous rectification, audio amplifiers, constant current sources, ramp generators, current regulators, and protection circuits. It is available in a TO-263 package and is RoHS compliant and Halogen-free available.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Part Number: DMB16C20A
- Package: TO-263
- Marking: 16C20
- Certifications: RoHS Compliant, Halogen-free Available
- Origin: Chengdu, Sichuan (implied by address)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 200 | V | TC=25 unless otherwise specified |
| Drain-to-Gate Voltage | VDGX | -- | -- | 200 | V | TC=25 unless otherwise specified |
| Power Dissipation | PD | -- | -- | 230 | W | TC=25 unless otherwise specified |
| Derating Factor above 25 | -- | -- | 1.85 | -- | W/ | -- |
| Gate-to-Source Voltage | VGS | -- | -- | ±20 | V | TC=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ and TSTG | -55 | -- | 150 | -- | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | -- | 0.54 | -- | /W | -- |
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 200 | -- | -- | V | TJ =25 unless otherwise specified, VGS=-10V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 5 | µA | TJ =25 unless otherwise specified, VDS=200V, VGS=-10V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 1 | µA | TJ =25 unless otherwise specified, VGS=+20V, VDS=0V |
| -- | -- | -- | -- | -1 | µA | TJ =25 unless otherwise specified, VGS=-20V, VDS=0V |
| ON Characteristics | ||||||
| Saturated Drain-to-Source Current | IDSS | 16 | -- | -- | A | TJ =25 unless otherwise specified, VDS=25V, VGS=0V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | -- | 80 | m | TJ =25 unless otherwise specified, VGS=0V, ID=8A[2] |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -4.5 | -- | -1.6 | V | TJ =25 unless otherwise specified, VDS=3V, ID=4mA |
| Forward Transconductance | gfs | -- | 12.5 | -- | S | TJ =25 unless otherwise specified, VDS=20V, ID=8A[2] |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | -- | 10200 | -- | pF | Essentially independent of operating temperature, VGS=-10V, VDS=25V, f=1.0MHz |
| Output Capacitance | Coss | -- | 545 | -- | pF | Essentially independent of operating temperature, VGS=-10V, VDS=25V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 83 | -- | pF | Essentially independent of operating temperature, VGS=-10V, VDS=25V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 130 | -- | nC | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A |
| Gate-to-Source Charge | Qgs | -- | 40 | -- | nC | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 25 | -- | nC | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 64 | -- | ns | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A, RG=3.3 |
| Rise Time | trise | -- | 54 | -- | ns | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A, RG=3.3 |
| Turn-off Delay Time | td(off) | -- | 133 | -- | ns | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A, RG=3.3 |
| Fall Time | tfall | -- | 50 | -- | ns | Essentially independent of operating temperature, VGS=-6V~6V, VDD=100V, ID=8A, RG=3.3 |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.5 | V | TJ=25 unless otherwise specified, ISD=8A[2], VGS=-10V |
2410121521_ARK-micro-DMB16C20A_C19184454.pdf
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