P Channel Enhancement Mode Power MOSFET BL BLM3407 with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
BLM3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
700pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
BLM3407
Package:
SOT-23
Product Description
Product Overview
The Belling BLM3407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). It boasts high power and current handling capabilities and is a lead-free product.
Product Attributes
- Brand: Belling
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Technology: Advanced Trench Technology
- Certifications: Pb Free Product Acquired
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| General Features | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Continuous Drain Current | ID | -4.1 | A | |
| RDS(ON) | VGS=-4.5V | < 95 | m | |
| RDS(ON) | VGS=-10V | < 65 | m | |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | -4.1 | A | |
| Drain Current-Pulsed (Note 1) | IDM | -20 | A | |
| Maximum Power Dissipation | PD | 1.4 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Characteristic | ||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 90 | /W | |
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA |
| On Characteristics (Note 3) | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 To -3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.1A | 55 To 65 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 75 To 95 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | 5.5 | S |
| Dynamic Characteristics (Note 4) | ||||
| Input Capacitance | Clss | 700 | PF | |
| Output Capacitance | Coss | 120 | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 75 | PF |
| Switching Characteristics (Note 4) | ||||
| Turn-on Delay Time | td(on) | 9 | nS | |
| Turn-on Rise Time | tr | 5 | nS | |
| Turn-Off Delay Time | td(off) | 28 | nS | |
| Turn-Off Fall Time | tf | VDD=-15V,RL=3.6, VGS=-10V,RGEN=3 | 13.5 | nS |
| Total Gate Charge | Qg | 14 | nC | |
| Gate-Source Charge | Qgs | 3.1 | nC | |
| Gate-Drain Charge | Qg d | VDS=-15V,ID=-4A,VGS=-10V | 3 | nC |
| Drain-Source Diode Characteristics | ||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V, IS=-1A | -1.2 | V |
| Package Information | ||||
| Device Marking | 3407 | |||
| Device | BLM3407 | |||
| Package | SOT-23 | |||
| Reel Size | 180mm | |||
| Tape width | 8 mm | |||
| Quantity | 3000 units | |||
2409292332_BL-BLM3407_C341498.pdf
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