Fast response ARK micro DMD4523E MOSFET device ideal for current limiting and overvoltage protection
Key Attributes
Model Number:
DMD4523E
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
3.75A
RDS(on):
2Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@8uA
Reverse Transfer Capacitance (Crss@Vds):
6.54pF
Number:
1 N-channel
Output Capacitance(Coss):
62.8pF
Input Capacitance(Ciss):
1.11pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
158.82nC@6V~0V
Mfr. Part #:
DMD4523E
Package:
TO-252
Product Description
Product Overview
The DMD4523E is a Depletion-Mode Power MOSFET from ARK Microelectronics Co., Ltd. It features a normally-on operation, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. This RoHS compliant and optionally halogen-free device is designed for applications requiring transient protection, start-up circuits, converters, normally-on switches, LED drive circuits, power supplies, and current/voltage sources. Its key advantages include fast response speed, simple circuit structure, and low cost, making it suitable for current limiting and overcurrent/overvoltage protection scenarios.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free Available
- Package: TO-252
Technical Specifications
| Symbol | Parameter | DMD4523E | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||
| VDSX | Drain-to-Source Voltage | 450 | V | TA=25 unless otherwise specified [1] |
| VDGX | Drain-to-Gate Voltage | 450 | V | TA=25 unless otherwise specified [1] |
| ID | Continuous Drain Current | 3.75 | A | TA=25 unless otherwise specified |
| IDM | Pulsed Drain Current | 15 | A | TA=25 unless otherwise specified [2] |
| PD | Power Dissipation | 36 | W | TA=25 unless otherwise specified |
| VGS | Gate-to-Source Voltage | ±20 | V | TA=25 unless otherwise specified |
| VESD | Gate Source ESD | 3000 | V | [3] |
| Source to Gate ESD | 3000 | V | [3] | |
| TL | Soldering Temperature | 300 | Distance of 1.6mm from case for 10 seconds | |
| TJ and TSTG | Operating and Storage Temperature Range | -55 to 150 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 3.47 | /W | |
| OFF Characteristics | ||||
| BVDSX | Drain-to-Source Breakdown Voltage | 450 | V | VGS=-10V, ID=250µA |
| IDS(OFF) | Drain-to-Source Leakage Current | 1 | µA | VDS=450V, VGS=-10V |
| IGSS | Gate-to-Source Leakage Current | 20 | µA | VGS=+20V, VDS=0V |
| -20 | VGS=-20V, VDS=0V | |||
| ON Characteristics | ||||
| RDS(ON) | Static Drain-to-Source On-Resistance | 2 | Ω | VGS=0V, ID=1A [4] |
| VGS(OFF) | Gate-to-Source Cut-off Voltage | -1.7 to -4.0 | V | VDS=3V, ID=8µA |
| gfs | Forward Transconductance | 3100 | mS | VDS=5V, ID=1A [4] |
| Dynamic Characteristics | ||||
| CISS | Input Capacitance | 1.11 | pF | VGS=-7V, VDS=25V, f=1.0MHz |
| COSS | Output Capacitance | 62.80 | pF | VGS=-7V, VDS=25V, f=1.0MHz |
| CRSS | Reverse Transfer Capacitance | 6.54 | pF | VGS=-7V, VDS=25V, f=1.0MHz |
| QG | Total Gate Charge | 158.82 | nC | VGS=-6V~0V, VDD=25V, ID=200mA |
| QGS | Gate-to-Source Charge | 58.26 | nC | VGS=-6V~0V, VDD=25V, ID=200mA |
| QGD | Gate-to-Drain (Miller) Charge | 50.55 | nC | VGS=-6V~0V, VDD=25V, ID=200mA |
| Resistive Switching Characteristics | ||||
| td(on) | Turn-on Delay Time | 5.71 | ns | VGS=-6V~0V, VDD=25V, ID=200mA, RG=10 Ω |
| trise | Rise Time | 18.45 | ns | VGS=-6V~0V, VDD=25V, ID=200mA, RG=10 Ω |
| td(off) | Turn-off Delay Time | 26.40 | ns | VGS=-6V~0V, VDD=25V, ID=200mA, RG=10 Ω |
| tfall | Fall Time | 18.46 | ns | VGS=-6V~0V, VDD=25V, ID=200mA, RG=10 Ω |
| Source-Drain Diode Characteristics | ||||
| VSD | Diode Forward Voltage | 0.8 to 1.5 | V | ISD=200mA [4], VGS=-10V |
Notes:
[1] TJ=+25 to +150
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] The test is based on JEDEC EIA/JESD22-A114(HBM).
[4] Pulse width≤380µs; duty cycle≤2%.
2410121513_ARK-micro-DMD4523E_C3031421.pdf
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