ASDsemi ASDM68N80KQ R Low Gate Charge N Channel MOSFET for High Speed Switching in Power Electronics
Key Attributes
Model Number:
ASDM68N80KQ-R
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
540pF
Number:
-
Output Capacitance(Coss):
1.037nF
Input Capacitance(Ciss):
3.36nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
ASDM68N80KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM68N80KQ is a 68V N-Channel MOSFET featuring Trench Power Technology. It offers low RDS(ON) and low gate charge, making it optimized for fast-switching applications. This MOSFET is ideal for synchronous rectification in DC/DC and AC/DC converters, as well as isolated DC/DC converters in telecom and industrial sectors. Its robust design ensures reliable performance in demanding power supply applications.
Product Attributes
- Brand: Ascend Semiconductor
- Product Line: ASDM
- Technology: Trench Power Technology
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VGS = 0V) | VDSS | TC = 25C, unless otherwise noted | -- | -- | 68 | V |
| Continuous Drain Current | ID | TC = 25C | -- | -- | 80 | A |
| Continuous Drain Current | ID | TC = 100C | -- | -- | 49 | A |
| Pulsed Drain Current (note 1) | IDM | -- | -- | -- | 320 | A |
| Gate-Source Voltage | VGSS | -- | -- | -- | ±20 | V |
| Single Pulse Avalanche Energy (note 2) | EAS | -- | -- | -- | 79 | mJ |
| Avalanche Current (note 1) | IAs | -- | -- | -- | 23 | A |
| Power Dissipation (note 3) | PD | TC = 25C | -- | -- | 120 | W |
| Power Dissipation (note 3) | PD | TC = 100C | -- | -- | 60 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -- | -55 | -- | +175 | C |
| Thermal Resistance | ||||||
| Thermal Resistance, Junction-to-Case | RthJC | TO-252 | -- | -- | 1.4 | C/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-252 | -- | -- | 62 | C/W |
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 68 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 68V, VGS = 0V, TJ = 25ºC | -- | -- | 1 µA | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 68V, VGS = 0V, TJ = 100ºC | -- | -- | 25 | µA |
| Gate-Source Leakage | IGSS | VGS = ±20V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2 | -- | 4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 30A | -- | 7.7 | 9.5 | mΩ |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 30A | -- | 7.7 | 9.5 | mΩ |
| Forward Transconductance | gfs | VDS = 34V, ID = 30A | -- | 17.1 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 34V, VGS = 0V, f = 1.0MHz | -- | 3360 | -- | pF |
| Output Capacitance | Coss | -- | -- | 1037 | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | 540 | -- | pF |
| Total Gate Charge | Qg | VDD = 34V, ID = 50A, VGS = 10V | -- | 70 | -- | nC |
| Gate-Source Charge | Qgs | -- | -- | 20 | -- | nC |
| Gate-Drain Charge | Qgd | -- | -- | 17 | -- | nC |
| Turn-on Delay Time | td(on) | VDD = 34V, ID = 50A, RG = 2.5Ω | -- | 8 | -- | ns |
| Turn-on Rise Time | tr | -- | -- | 17 | -- | ns |
| Turn-off Delay Time | td(off) | -- | -- | 40 | -- | ns |
| Turn-off Fall Time | tf | -- | -- | 15 | -- | ns |
| Body Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | TC = 25ºC | -- | -- | 80 | A |
| Pulsed Diode Forward Current | ISM | TC = 25ºC | -- | -- | 320 | A |
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 30A, VGS = 0V | -- | -- | 1.2 | V |
| Reverse Recovery Time | trr | IF = 30A, diF/dt = 100A/µs | -- | 30 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | -- | 45 | -- | nC |
2410121637_ASDsemi-ASDM68N80KQ-R_C2972877.pdf
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