Power MOSFET BL BLM2012E N Channel Enhancement Mode Device with Excellent RDS ON and Low Gate Voltage
Key Attributes
Model Number:
BLM2012E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
2 N-Channel
Output Capacitance(Coss):
185pF
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
BLM2012E
Package:
TSSOP-8
Product Description
Product Overview
The BLM2010E is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for load switch and PWM applications, and it is ESD protected with a rating of 2000V HBM. The BLM2010E provides high power and current handling capability and is a lead-free product.
Product Attributes
- Brand: Belling
- Product Model: BLM2010E
- Technology: N-Channel Enhancement Mode Power MOSFET
- Certifications: ROHS
- Package: TSSOP-8
- ESD Rating: 2000V HBM
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 7 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 30 | A | |||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 83.3 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | - | - | ±10 | µA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 0 | 0.9 | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=6.5A | - | 66 | - | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=5.5A | - | 20 | 27 | m |
| Forward Transconductance | gFS | VDS=5V,ID=7A | - | 20 | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=10V,VGS=0V, F=1.0MHz | - | 1150 | - | PF |
| Output Capacitance | Coss | - | 185 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 145 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=10V,RL=1.35, VGS=5V,RGEN=3 | - | 6 | - | nS |
| Turn-on Rise Time | tr | - | 13 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | - | 16 | - | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=7A, VGS=4.5V | - | 15 | - | nC |
| Gate-Source Charge | Qgs | - | 0.8 | - | nC | |
| Gate-Drain Charge | Qg | - | 3.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=1A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 7 | A | |
| Package Information (TSSOP-8) | ||||||
| Symbol | Dimensions In Millimeters (Min) | Dimensions In Millimeters (Max) | ||||
| D | 2.900 | 3.100 | ||||
| E | 4.300 | 4.500 | ||||
| b | 0.190 | 0.300 | ||||
| c | 0.090 | 0.200 | ||||
| E1 | 6.250 | 6.550 | ||||
| A | 1.100 | |||||
| A2 | 0.800 | 1.000 | ||||
| A1 | 0.020 | 0.150 | ||||
| e | 0.65(BSC) | |||||
| L | 0.500 | 0.700 | ||||
| H | 0.25(TYP) | |||||
| 1 | 7 | |||||
Ordering Information:
| Device Marking | Device | Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|---|
| 2010E | BLM2010E | TSSOP-8 | Ø330mm | 12mm | 3000 units |
Notes:
- 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
- 2. Surface Mounted on FR4 Board, t ≤ 10 sec.
- 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
- 4. Guaranteed by design, not subject to production testing.
2411121043_BL-BLM2012E_C213385.pdf
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