High density cell application MOSFET ASDsemi ASDM60N30KQ R with fully characterized avalanche voltage
Key Attributes
Model Number:
ASDM60N30KQ-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
42mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
66.8pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
1.562nF@25V
Gate Charge(Qg):
25nC
Mfr. Part #:
ASDM60N30KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM60N30KQ is a 60V N-Channel MOSFET designed for high-density cell applications, offering ultra-low Rdson and excellent thermal dissipation. It features fully characterized avalanche voltage and current for robust performance, along with high EAS and special process technology for superior ESD capability. This MOSFET is ideal for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Ascend Semiconductor
- Product Line: MOSFET
- Channel Type: N-Channel
- Package Type: TO-252
- Origin: China (implied by Xi'an Ascend Semiconductor)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 30 | A | ||
| ID | Continuous Drain Current | TC = 100 | 20 | A | ||
| IDM | Pulsed Drain Current | note1 | 120 | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 72 | mJ | ||
| PD | Power Dissipation | TC = 25 | 55 | W | ||
| RJC | Thermal Resistance, Junction to Case | 2.7 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=48V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=15A | - | 23 | 36 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=10A | - | 29 | 42 | m |
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 1562 | - | pF |
| Coss | Output Capacitance | - | 75.4 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 66.8 | - | pF | |
| Qg | Total Gate Charge | VDS=30V, ID=15A, VGS=10V | - | 25 | - | nC |
| Qgs | Gate-Source Charge | - | 4.5 | - | nC | |
| Qgd | Gate-Drain (Miller) Charge | - | 6.5 | - | nC | |
| td(on) | Turn-on Delay Time | VDS =30V, ID=15A, RG=1.8, VGS=10V | - | 7.5 | - | ns |
| tr | Turn-on Rise Time | - | 21 | - | ns | |
| td(off) | Turn-off Delay Time | - | 16 | - | ns | |
| tf | Turn-off Fall Time | - | 23.5 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 30 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 120 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=15A, dI/dt=100A/s | - | 29 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 45 | - | nC | |
| Model | ASDM60N30KQ |
Notes:
- 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
- 2. EAS condition: TJ=25, VDD=30V, VG=10V, L=0.5mH, Rg=25
- 3. Pulse Test: Pulse Width300s, Duty Cycle0.5%
Ordering and Marking Information
| Package | Marking | Ordering Device No. | Packing Quantity |
|---|---|---|---|
| TO-252 | 60N30 | ASDM60N30KQ-R | 2500/Reel |
2410121536_ASDsemi-ASDM60N30KQ-R_C2972868.pdf
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