Dual N Channel MOSFET ARK micro FTF25N35DHVT with 250V Drain to Source Voltage and PDFN3333 Package
Key Attributes
Model Number:
FTF25N35DHVT
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
900mA
RDS(on):
25Ω@10V,100mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
16W
Gate Charge(Qg):
-
Mfr. Part #:
FTF25N35DHVT
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The FTF25N35DHVT is a Dual N-Channel MOSFET from ARK Microelectronics, featuring a proprietary advanced planar technology and a rugged polysilicon gate cell structure. Designed with advanced high Vth technology, this device is RoHS compliant and available in a halogen-free option. It is suitable for applications requiring high voltage and efficient switching.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (V) | Continuous Drain Current (A) | Power Dissipation (W) | Gate-to-Source Voltage (V) | Static Drain-to-Source On-Resistance () | Gate Threshold Voltage (V) |
| FTF25N35DHVT | PDFN3333 | 250 | 0.9 | 16 | ±20 | 12 (Typ.), 25 (Max.) | 2 (Min.), 5 (Max.) |
2410121521_ARK-micro-FTF25N35DHVT_C19184460.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
