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quality power MOSFET ASDsemi ASDM100N34KQ-R 100V N-Channel featuring advanced trench technology for operation factory
quality power MOSFET ASDsemi ASDM100N34KQ-R 100V N-Channel featuring advanced trench technology for operation factory

power MOSFET ASDsemi ASDM100N34KQ-R 100V N-Channel featuring advanced trench technology for operation

Key Attributes
Model Number: ASDM100N34KQ-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
34A
Operating Temperature -:
-55℃~+175℃
RDS(on):
36mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
252pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.5nF@25V
Pd - Power Dissipation:
63W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ASDM100N34KQ-R
Package:
TO-252
Product Description

Product Overview

The ASDM100N34KQ is a 100V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It features Advanced Trench Technology, offering excellent RDS(ON) and low gate charge for efficient performance. This lead-free product is designed for applications such as load switching and PWM applications, making it suitable for power management solutions. Its robust design ensures reliable operation in demanding environments.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Product Line: ASDM100N34KQ
  • Technology: Advanced Trench Technology
  • Environmental Compliance: Lead-free product acquired
  • Package Type: TO-252

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
Product Summary
VDSS Drain-Source Voltage 100 V
RDS(ON)-Typ 24 m
ID 34 A
Absolute Maximum Ratings (TC=25 unless otherwise specified)
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current TC = 25 34 A
ID Continuous Drain Current TC = 100 20 A
IDM Pulsed Drain Current note1 120 A
EAS Single Pulsed Avalanche Energy note2 110 mJ
PD Power Dissipation TC = 25 63 W
RJC Thermal Resistance, Junction to Case 2.5 /W
TJ, TSTG Operating and Storage Temperature Range -55 +175
Electrical Characteristics (TJ=25 unless otherwise specified)
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V - - 1.0 A
IGSS Gate to Body Leakage Current VDS=0V, VGS=20V - - 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.5 2.5 V
RDS(on) Static Drain-Source on-Resistance VGS=10V, ID=20A (note2) - 24 32 m
RDS(on) Static Drain-Source on-Resistance VGS=4.5V, ID=10A (note2) - 26 36 m
Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz - 1500 - pF
Coss Output Capacitance - 380 - pF
Crss Reverse Transfer Capacitance - 252 - pF
Qg Total Gate Charge VDS=30V, ID=15A, VGS=10V - 23 - nC
Qgs Gate-Source Charge - 5 - nC
Qgd Gate-Drain(Miller) Charge - 4 - nC
td(on) Turn-on Delay Time VDS=30V, ID=15A, RG=1.8, VGS=10V - 12.6 - ns
tr Turn-on Rise Time - 6 - ns
td(off) Turn-off Delay Time - 22 - ns
tf Turn-off Fall Time - 5.3 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - 30 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 120 A
VSD Drain to Source Diode Forward Voltage VGS=0V, IS=30A - - 1.2 V
trr Body Diode Reverse Recovery Time IF=15A,dI/dt=100A/s - 71 - ns
Qrr Body Diode Reverse Recovery Charge - 145 - nC
Ordering and Marking Information
Package Marking Ordering Device No. Packing Quantity
TO-252 100N34 ASDM100N34KQ-R Tape&Reel 2500

2410121548_ASDsemi-ASDM100N34KQ-R_C2972881.pdf

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