Durable ARK micro FTD03P20G 200V P Channel MOSFET with secondary breakdown free and RoHS compliance

Key Attributes
Model Number: FTD03P20G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.4pF
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
228.3pF
Gate Charge(Qg):
6.5nC@10V
Mfr. Part #:
FTD03P20G
Package:
TO-252
Product Description

Product Overview

The FTD03P20G is a 200V P-Channel Enhancement-Mode MOSFET from ARK Microelectronics Co., Ltd. It features a rugged polysilicon gate cell structure, integrated gate-to-source resistor and Zener diode, low on-resistance, low threshold voltage, low input capacitance, and fast switching speeds. This MOSFET is free from secondary breakdown and is available in a halogen-free, RoHS-compliant package. It is suitable for applications such as amplifiers, buffers, general-purpose line drivers, high-voltage pulsers, logic-level interfaces, and piezoelectric transducer drivers.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Origin: Chengdu, Sichuan (implied by address)
  • Certifications: Halogen-free Available, RoHS Compliant

Technical Specifications

Part Number Package Marking Remark VDSX (V) ID (A) RDS(ON) () VGS(TH) (V) Qg (nC) td(on) (ns) trise (ns) td(off) (ns) tfall (ns)
FTD03P20G TO-252 03P20 Halogen Free -200 -2 6 (Max. @ VGS=-4.5V, ID=-150mA) -1 to -2.4 6.5 (Typ.) 3.8 (Typ.) 8.9 (Typ.) 18.8 (Typ.) 6.6 (Typ.)

2504101957_ARK-micro-FTD03P20G_C46531782.pdf

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