Durable power MOSFET ARK Micro DMS1072 suitable for surge current suppression and normally on switch
Key Attributes
Model Number:
DMS1072
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
300mA
RDS(on):
3Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@8uA
Reverse Transfer Capacitance (Crss@Vds):
6.6pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
81.3pF@25V
Gate Charge(Qg):
2.52nC@±5V
Mfr. Part #:
DMS1072
Package:
SOT-223
Product Description
Product Overview
The ARK Microelectronics DMX1072/DMS1072 are depletion-mode (normally-on) power MOSFETs utilizing proprietary advanced planar technology with a rugged polysilicon gate cell structure. These devices offer ESD improved capability and fast switching speeds, making them suitable for suppressing surge currents, acting as normally-on switches, constant current sources, and protection circuits. They are RoHS compliant and available in Halogen-free options.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, China
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Remark | VDSX (V) | VDGX (V) | ID (A) | IDM (A) | PD (W) | Derating Factor (W/) | VGS (V) | VESD(G-S) (V) | TL () | TJ and TSTG () | RJC (K/W) |
| DMX1072 | SOT-89 | Halogen Free | 100 | 100 | 0.3 | 1.2 | 1.0 | 0.008 | 20 | 1500 | 300 | -55 to 150 | 125 |
| DMS1072 | SOT-223 | Halogen Free | 100 | 100 | 0.3 | 1.2 | 1.5 | 0.012 | 20 | 1500 | 300 | -55 to 150 | 83 |
| Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
| OFF Characteristics | |||||
| BVDSX Drain-to-Source Breakdown Voltage | 100 | -- | -- | V | VGS=-5V, ID=250A |
| ID(OFF) Drain-to-Source Leakage Current | -- | -- | 1 | A | VDS=100V, VGS=-5V |
| -- | -- | 1 | mA | VDS=100V, VGS=-5V TJ=125 | |
| IGSS Gate-to-Source Leakage Current | -- | -- | 20 | A | VGS=+20V, VDS=0V |
| -- | -- | -20 | VGS=-20V, VDS=0V | ||
| ON Characteristics | |||||
| IDSS Saturated Drain-to-Source Current | 0.3 | -- | -- | A | VGS=0V, VDS=25V |
| RDS(ON) Static Drain-to-Source On-Resistance | -- | -- | 3.0 | VGS=0V, ID=0.15A [3] | |
| -- | -- | 2.8 | VGS=5V, ID=0.15A [3] | ||
| VGS(OFF) Gate-to-Source Cut-off Voltage | -3.3 | -- | -1.5 | V | VDS=3V, ID=8A |
| gfs Forward Transconductance | -- | 0.46 | -- | S | VDS=20V, ID=0.15A |
| Dynamic Characteristics | |||||
| CISS Input Capacitance | -- | 81.3 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| COSS Oput Capacitance | -- | 32.7 | -- | ||
| CRSS Reverse Transfer Capacitance | -- | 6.6 | -- | ||
| QG Total Gate Charge | -- | 2.52 | -- | nC | VGS=-5V~5V VDS=50V, ID=0.15A |
| QGS Gate-to-Source Charge | -- | 0.69 | -- | ||
| QGD Gate-to-Drain (Miller) Charge | -- | 0.7 | -- | ||
| Resistive Switching Characteristics | |||||
| td(ON) Turn-on Delay Time | -- | 6.2 | -- | ns | VGS=-5V~5V VDD=50V, ID=0.15A RG=10 |
| trise Rise Time | -- | 4.8 | -- | ||
| td(OFF) Turn-off Delay Time | -- | 11.6 | -- | ||
| tfall Fall Time | -- | 17 | -- | ||
| Source-Drain Diode Characteristics | |||||
| VSD Diode Forward Voltage | -- | -- | 1.5 | V | ISD=0.15A, VGS=-10V |
2410121536_ARK-micro-DMS1072_C3031410.pdf
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