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quality N Channel MOSFET 30V SOP 8 Package ASDsemi ASDM4406S R Designed for in Networking and LED Lighting factory
quality N Channel MOSFET 30V SOP 8 Package ASDsemi ASDM4406S R Designed for in Networking and LED Lighting factory

N Channel MOSFET 30V SOP 8 Package ASDsemi ASDM4406S R Designed for in Networking and LED Lighting

Key Attributes
Model Number: ASDM4406S-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
-
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
910pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
ASDM4406S-R
Package:
SOP-8
Product Description

Product Overview

The Ascend ASDM4406S is a 30V N-Channel MOSFET designed for high efficiency and reliable performance. Featuring advanced trench process technology and a low dense cell design, it offers improved dv/dt capability. This MOSFET is well-suited for applications such as networking, load switching, and LED lighting.

Product Attributes

  • Brand: Ascend Semicondutor Co.,Ltd
  • Product Line: ASCEND
  • Model Series: ASDM4406S
  • Technology: Advanced trench process technology
  • Package Type: SOP-8
  • Orientation: N-Channel
  • Date of Publication: NOV 2018
  • Version: 1.0

Technical Specifications

Parameter Conditions Symbol Min Typ Max Units
Product Summary
Drain-Source Breakdown Voltage VDS=30V, VGS=0V BVDSS 30 V
Gate-Body leakage current VDS=0V, VGS=20V IGSS 100 nA
Gate Threshold Voltage VDS=VGS, ID=250A VGS(th) 1.0 1.4 2.0 V
On state drain current VGS=10V, ID=12A ID(ON) A
Static Drain-Source On-Resistance VGS=10V, ID=12A RDS(ON) 9.0 11.3 m
Static Drain-Source On-Resistance VGS=4.5V, ID=10A RDS(ON) 11.3 14.0 m
Forward Transconductance VDS=5V, ID=12A gFS 45 S
Body-Diode Forward Voltage IS=1A,VGS=0V VSD 0.75 1 V
Maximum Body-Diode Continuous Current IS 4 A
Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=85C IDSS 30 A
Input Capacitance VGS=0V, VDS=15V, f=1MHz Ciss 610 760 910 pF
Output Capacitance VGS=0V, VDS=15V, f=1MHz Coss 88 125 160 pF
Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Crss 40 70 100 pF
Gate resistance Rg 0.8 1.6 2.4
Total Gate Charge VGS=10V, VDS=15V, ID=12A Qg(10V) 11 14 17 nC
Total Gate Charge VGS=4.5V, VDS=15V, ID=12A Qg(4.5V) 5 6.6 8 nC
Gate Source Charge Qgs 1.9 2.4 2.9 nC
Gate Drain Charge Qgd 1.8 3 4.2 nC
Turn-On DelayTime VGS=10V, VDS=15V, RL=1.25, RGEN=3 tD(on) 4.4 ns
Turn-On Rise Time tr 9 ns
Turn-Off DelayTime tD(off) 17 ns
Turn-Off Fall Time tf 6 ns
Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/s trr 5.6 7 8 ns
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s Qrr 6.4 8 9.6 nC
Absolute Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current TA=25C ID 13 A
Continuous Drain Current TA=70C ID 10.4 A
Pulsed Drain Current t 10s IDM 52 A
Avalanche Current IAS 13 A
Avalanche energy L=0.1mH EAS 24 mJ
Junction and Storage Temperature Range TJ, TSTG -55 150 C
Power Dissipation TA=25C PD 3.1 W
Power Dissipation TA=70C PD 2 W
Thermal Characteristics
Maximum Junction-to-Lead RJL 16 24 C/W
Maximum Junction-to-Ambient RJA 31 59 C/W

2410121738_ASDsemi-ASDM4406S-R_C2758238.pdf

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