60V N Channel MOSFET ASDsemi ASDM60R042NQ-R with Low On Resistance and High Continuous Drain Current
Key Attributes
Model Number:
ASDM60R042NQ-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
116A
RDS(on):
5.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
-
Output Capacitance(Coss):
438pF
Input Capacitance(Ciss):
1.625nF
Pd - Power Dissipation:
113W
Gate Charge(Qg):
33.4nC@10V
Mfr. Part #:
ASDM60R042NQ-R
Package:
DFN5x6-8
Product Description
Product Overview
The Ascend Semiconductor ASDM60R042NQ is a 60V N-Channel MOSFET designed with Advanced Trench MOS Technology. It offers low on-resistance, fast switching speeds, and excellent heat dissipation, making it suitable for demanding applications such as DC/DC converters, on-board power for servers, and synchronous rectification. This MOSFET is 100% avalanche tested and features robust thermal performance, ensuring reliability in operation.
Product Attributes
- Brand: Ascend Semiconductor
- Technology: Advanced Trench MOS
- Package Type: DFN5x6-8
- Channel Type: N-Channel
- Testing: 100% avalanche tested
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current | 116 | A | |||
| ID@TC=100 | Continuous Drain Current | 74 | A | |||
| IDM | Pulsed Drain Current | 464 | A | |||
| EAS | Single Pulse Avalanche Energy | 125 | mJ | |||
| IS | Avalanche Current | 116 | A | |||
| PD@TC=25 | Total Power Dissipation | 113 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | (t<≈10S) | 26 | /W | ||
| RJA | Thermal Resistance Junction-ambient | (Steady State) | 62 | /W | ||
| RJC | Thermal Resistance Junction-case | 1.1 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VDS=30V , VGS=10V , ID=20A | 33.4 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 4.4 | 5.2 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | 6.4 | 7.8 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.4 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge | (10V) | 17.8 | nC | ||
| Qg | Total Gate Charge | (4.5V) | nC | |||
| Qgs | Gate-Source Charge | 5.8 | ||||
| Qgd | Gate-Drain Charge | 7.9 | ||||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=20A | 7.5 | ns | ||
| Tr | Rise Time | 6 | ns | |||
| Td(off) | Turn-Off Delay Time | 29 | ns | |||
| Tf | Fall Time | 7.5 | ns | |||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1625 | pF | ||
| Coss | Output Capacitance | 438 | pF | |||
| Crss | Reverse Transfer Capacitance | 25 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 116 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=20A , dI/dt=400A/µs , TJ=25 | 23 | nS | ||
| Qrr | Reverse Recovery Charge | 60 | nC | |||
2410121617_ASDsemi-ASDM60R042NQ-R_C2972876.pdf
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