switching MOSFET ARK micro FTX30P35G 350V P Channel ideal for power supply and charger applications
Key Attributes
Model Number:
FTX30P35G
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
200mA
RDS(on):
30Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.84pF
Number:
1 P-Channel
Output Capacitance(Coss):
6.94pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
43.39pF
Mfr. Part #:
FTX30P35G
Package:
SOT-89
Product Description
Product Overview
The FTX30P35G is a 350V P-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd., featuring a proprietary advanced planar technology and a rugged polysilicon gate cell structure. It offers fast switching speeds and is suitable for high efficiency SMPS, adaptor/charger, and active PFC applications. This product is RoHS compliant and halogen-free available.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | RDS(ON) (Max.) | BVDSS | IDSS | IGSS | VGS(TH) | CISS | COSS | CRSS | td(ON) | trise | td(OFF) | tfall | VSD |
| FTX30P35G | SOT-89 | -350 V | -0.2 A | 1.0 W | 20 V | 30 | -350V | -1 A | 20 A | -3 V | 43.39 pF | 6.94 pF | 0.84 pF | 12 ns | 60 ns | 136 ns | 320 ns | -1.8 V |
2410121606_ARK-micro-FTX30P35G_C3031433.pdf
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