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quality ASDsemi ASDM40N80KQ R 40V N Channel MOSFET Low On Resistance Fast Switching for Power Supply Designs factory
quality ASDsemi ASDM40N80KQ R 40V N Channel MOSFET Low On Resistance Fast Switching for Power Supply Designs factory

ASDsemi ASDM40N80KQ R 40V N Channel MOSFET Low On Resistance Fast Switching for Power Supply Designs

Key Attributes
Model Number: ASDM40N80KQ-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 N-channel
Output Capacitance(Coss):
1.513nF
Input Capacitance(Ciss):
3.027nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
ASDM40N80KQ-R
Package:
TO-252
Product Description

Product Overview

The ASDM40N80KQ is a 40V N-Channel MOSFET designed for high-performance applications. It features low on-resistance and fast switching speeds, making it ideal for DC/DC converters, on-board power for servers, and synchronous rectification. This device is 100% avalanche tested and available in Lead Free and Green Devices (RoHS Compliant) options.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Type: N-Channel MOSFET
  • Compliance: RoHS Compliant (Lead Free and Green Devices Available)

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
Maximum Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Continuous Drain Current@TC(VGS=10V) ID © 80 A TC=25°C
Continuous Drain Current@TC(VGS=10V) ID © 51 A TC=100°C
Continuous Drain Current@TA(VGS=10V) ID ©© 25 A TA=25°C
Continuous Drain Current@TA(VGS=10V) ID ©© 19 A TA=70°C
Maximum Power Dissipation@TC PD 65 W TC=25°C
Maximum Power Dissipation@TA PD ©© 4.2 W TA=25°C
Maximum Power Dissipation@TA PD ©© 2.7 W TA=70°C
300µs Pulse Drain Current IDP © 320 A TC=25°C
Diode Continuous Forward Current IS 80 A Mounted on Large Heat Sink
Thermal Resistance-Junction to Case RθJC 2.4 °C/W
Thermal Resistance-Junction to Ambient RθJA 62 °C/W
Avalanche Energy, Single Pulsed EAS © 121 mJ
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, IDS=250µA
Gate Threshold Voltage VGS(th) 2.5 V VDS=VGS, IDS=250µA
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V
Zero Gate Voltage Drain Current IDSS 30 µA TJ=125°C
Gate Leakage Current IGSS ±100 nA VGS=±20V, VDS=0V
Drain-Source On-state Resistance RDS(ON) 5.5 mΩ VGS=4.5V, IDS=35A
Drain-Source On-state Resistance RDS(ON) 4.0 mΩ VGS=10V, IDS=50A
Drain-Source On-state Resistance RDS(ON)-Typ@VGS=10V 4.0 mΩ
Diode Forward Voltage VSD © 1.2 V IS=50A, dISD/dt=100A/µs
Reverse Recovery Time trr 18 ns ISD=50A, VGS=0V
Reverse Recovery Charge Qrr 29 nC
Input Capacitance Ciss 3027 pF VDS=32V, VGS=10V, IDS=50A
Output Capacitance Coss 1513 pF VGS=0V, VDS=20V, Frequency=1.0MHz
Reverse Transfer Capacitance Crss 155 pF VGS=0V, VDS=20V, Frequency=1.0MHz
Turn-on Delay Time td(ON) 13 ns VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω
Turn-on Rise Time tr 21 ns VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω
Turn-off Delay Time td(OFF) 29 ns VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω
Turn-off Fall Time tf 9 ns VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω
Total Gate Charge Qg 29 nC VDS=32V, VGS=10V, IDS=50A
Gate-Source Charge Qgs 5.5 nC VDS=32V, VGS=10V, IDS=50A
Gate-Drain Charge Qgd 9 nC VDS=32V, VGS=10V, IDS=50A
Gate Resistance RG 1.3 Ω
Model ASDM40N80KQ 40V N-Channel MOSFET
Package TO-252
Marking 40N80
Packing Tape&Reel 2500/Reel

2410121913_ASDsemi-ASDM40N80KQ-R_C2972888.pdf

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