Dual N Channel and P Channel PowerTrench MOSFET ASDsemi ASDM4100S R for Power Management Applications
Key Attributes
Model Number:
ASDM4100S-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
185mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
-
Output Capacitance(Coss):
220pF
Input Capacitance(Ciss):
620pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
ASDM4100S-R
Package:
SOP-8
Product Description
Product Overview
The Ascend Semiconductor ASDM4410S is a 100V Dual N & P-Channel PowerTrench MOSFET designed for various power management applications. It features a low on-resistance (RDS(ON)) of 185m at VGS = -10V for the P-channel and 95m at VGS = 10V for the N-channel. This device is suitable for applications including DCDC drive, DC-DC primary bridge, DC-DC synchronous rectification, and hot-swap functionalities.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Series: PowerTrench
- Package Type: SOP-8
- Channel Type: Dual N-Channel & P-Channel
- Origin: China (implied by company name and location)
Technical Specifications
| Symbol | Parameter | Test Conditions | Type | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | |||||||
| VDSS | Drain-Source Voltage | N-CH | 100 | V | |||
| VDS | Drain-Source Voltage | P-CH | -100 | V | |||
| RDS(on),Typ@ VGS=10V | Static Drain-Source On-Resistance | VGS = 10 V, VDS = 5 V | N-CH | 95 | m | ||
| RDS(on),Typ@ VGS=-10V | Static Drain-Source On-Resistance | VGS = -10 V, VDS = -5 V | P-CH | 185 | m | ||
| ID | Drain Current - Continuous (Note 1a) | N-CH | 5 | A | |||
| ID | Drain Current - Continuous (Note 1a) | P-CH | -4 | A | |||
| PD | Pulsed Power Dissipation for Dual Operation (Note 1a) | 20 | W | ||||
| PD | Power Dissipation for Single Operation (Note 1b, 1c) | 1.6 | 1 | 0.9 | W | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | C | |||
| Thermal Characteristics | |||||||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 78 | C/W | ||||
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 40 | C/W | ||||
| Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 A | N-CH | 100 | V | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = -250 A | P-CH | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 24 V, VGS = 0 V | N-CH | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -24 V, VGS = 0 V | P-CH | -1 | A | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 A | N-CH | 1.6 | 3 | V | |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250 A | P-CH | -1.6 | -3 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 5 A | N-CH | 95 | 120 | m | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -10 V, ID = -4 A | P-CH | 185 | 220 | m | |
| DrainSource Diode Characteristics and Maximum Ratings | |||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | N-CH | -4 | A | |||
| IS | Maximum Continuous Drain-Source Diode Forward Current | P-CH | -5 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS = -3 A | N-CH | -1.2 | -1.5 | V | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS = -3 A | P-CH | -1.2 | -1.5 | V | |
| Switching Characteristics (Note 2) | |||||||
| td(on) | Turn-On Delay Time | VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 6 | N-CH | 2.5 | ns | ||
| td(on) | Turn-On Delay Time | VDD = -10 V, ID = -1 A, VGS = -10V, RGEN = 6 | P-CH | 4 | ns | ||
| Qg | Total Gate Charge | VDS = 15 V, ID = 10 S | N-CH | 11.5 | nC | ||
| Qg | Total Gate Charge | VDS = -15 V, ID = -10 S | P-CH | 12 | nC | ||
Ordering Information
| Device No. | Marking | Package | Packing Quantity |
|---|---|---|---|
| ASDM4100S-R | 4100 | SOP-8 | Tape&Reel 4000 |
2410121547_ASDsemi-ASDM4100S-R_C2758237.pdf
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