N Channel MOSFET for power management ASDsemi ASDM30N65E R featuring trench technology and 30 volt rating
Key Attributes
Model Number:
ASDM30N65E-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
436pF
Input Capacitance(Ciss):
1.113nF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
ASDM30N65E-R
Package:
DFN3.3x3.3-8
Product Description
Product Overview
The ASDM30N65E is a 30V N-Channel MOSFET from Ascend Semiconductor, designed with advanced high cell density Trench technology. It offers low gate charge, super low gate charge, and excellent CdV/dt effect decline, making it suitable for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial applications. This device is available as a Green Device.
Product Attributes
- Brand: Ascend Semiconductor
- Model: ASDM30N65E
- Technology: Advanced high cell density Trench technology
- Device Type: N-Channel MOSFET
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 32 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 26 | A | |||
| IDM | Pulsed Drain Current2 | 100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 61.3 | mJ | |||
| IAS | Avalanche Current | 35 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 5 | /W | ||
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 4.5 | 5.2 | mΩ | |
| VGS=4.5V , ID=15A | 7.2 | 9 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=30V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 65 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 0.8 | 2.6 | Ω | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=10V , ID=20A | 9 | --- | nC | |
| Qgs | Gate-Source Charge | 2.8 | --- | nC | ||
| Qgd | Gate-Drain Charge | 3.6 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3Ω ID=20A | 7 | --- | ns | |
| Tr | Rise Time | 18.8 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 19.5 | --- | ns | ||
| Tf | Fall Time | 3.4 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1113 | --- | pF | |
| Coss | Output Capacitance | 436 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 55 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Ordering and Marking Information | ||||||
| Device No. | Marking | Package | Packing | Quantity | ||
| ASDM30N65E-R | 30N65 | DFN3.3*3.3-8 | Tape&Reel | 5000 | ||
| Package Dimensions | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0 - 0.100 | 0 - 0.004 | ||||
| A2 | 0.550 REF. | 0.022 REF. | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0.152 REF. | 0.006 REF. | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| θ | 0° - 13° | 0° - 13° | ||||
2409291808_ASDsemi-ASDM30N65E-R_C2758222.pdf
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