Low rds on dual n channel mosfet ARK micro AKL30N5P0SD 30 volt enhancement mode for power management
Key Attributes
Model Number:
AKL30N5P0SD
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
12.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
2 N-Channel
Output Capacitance(Coss):
187pF
Input Capacitance(Ciss):
1.527nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
18.8nC@10V
Mfr. Part #:
AKL30N5P0SD
Package:
TSSOP-8
Product Description
ARK Microelectronics AKL30N5P0SD Dual N-Channel MOSFET
The AKL30N5P0SD is a 30V Dual N-Channel Enhancement Mode MOSFET from ARK Microelectronics, designed for high-efficiency applications. It features low RDS(ON) and low gate charge, utilizing advanced high cell density trench technology. This RoHS compliant and Halogen-free available component is suitable for DC/DC converters, synchronous rectification, UPS inverters, power management, battery-powered systems, and load switches.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Product Line: AKL30N5P0SD
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 30 | V | TA=25 unless otherwise specified [1] |
| Drain-to-Gate Voltage | VDGX | -- | -- | 30 | V | TA=25 unless otherwise specified [1] |
| Continuous Drain Current | ID | -- | -- | 10 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 35 | A | TA=25 unless otherwise specified [2] |
| Power Dissipation | PD | -- | -- | 2 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | ±20 | V | TA=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ & TSTG | -55 | -- | 150 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | 62.5 | -- | /W | |
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 30 | -- | -- | V | VGS=0V, ID=250µA |
| Drain-to-Source Leakage Current | IDSS | -- | -- | 1 | µA | VDS=30V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 100 | nA | VGS=20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -100 | nA | VGS=-20V, VDS=0V |
| ON Characteristics | ||||||
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 8.0 | 12.5 | mΩ | VGS=10V, ID=8A [3] |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 9.5 | 13.5 | mΩ | VGS=4.5V, ID=5A [3] |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 11.5 | 15 | mΩ | VGS=3.8V, ID=5A [3] |
| Gate Threshold Voltage | VGS(TH) | 1.0 | -- | 2.0 | V | VGD=0V, ID=250µA |
| Forward Transconductance | gfs | -- | 18 | -- | S | VDS=5V, ID=8A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | -- | 1527 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | -- | 187 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 151 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 18.8 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Gate-to-Source Charge | Qgs | -- | 6.0 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 6.6 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 16 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Rise Time | trise | -- | 45 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Turn-off Delay Time | td(off) | -- | 38 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Fall Time | tfall | -- | 14 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=3A, VGS=0V |
2410171116_ARK-micro-AKL30N5P0SD_C41432017.pdf
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