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quality 650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications factory
quality 650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications factory
quality 650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications factory
quality 650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications factory

650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications

Key Attributes
Model Number: BCH65S08D4
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@650V
Voltage - Forward(Vf@If):
1.55V@8A
Current - Rectified:
8A
Mfr. Part #:
BCH65S08D4
Package:
TO-220-2
Product Description

Product Overview

The BCH65S08D4 is a 650V, 8A Silicon Carbide (SiC) Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, featuring negligible reverse recovery, high-speed switching, and temperature-independent switching characteristics. It is ideal for use in switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies, contributing to reduced system size and cost.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Schottky Diode
  • Certifications: RoHS compliant

Technical Specifications

Symbol Parameter Test Conditions Value Unit
VRRM Repetitive Peak Reverse Voltage 650 V
IF Forward Current TC = 145 8 A
TC Case Temperature 145
QC Total Capacitive Charge VR = 400 V, TJ = 25 16 nC
VRRM Repetitive Peak Reverse Voltage 650 V
IF Forward Current TC = 25 18 A
IF Forward Current TC = 135 9 A
IF Forward Current TC = 145 8 A
IF,SM Non-Repetitive Forward Surge Current TC = 25, tp = 10 ms 54 A
IF,SM Non-Repetitive Forward Surge Current TC = 110, tp = 10 ms 35 A
IF,RM Repetitive Peak Forward Surge Current TC = 25, tp = 10 ms 47 A
I2dt I2t value TC = 25, tp = 10 ms 15 A2s
I2dt I2t value TC = 110, tp = 10 ms 6.2 A2s
Ptot Power Dissipation TC = 25 82 W
Ptot Power Dissipation TC = 110 36 W
Ptot Power Dissipation TC = 150 14 W
TJ,TSTG Operating Junction and Storage Temperature -55 to +175
RJC Thermal Resistance, Junction to Case, Typ. 1.83 /W
VDC DC blocking voltage 650 V
VF Forward Voltage IF=8ATJ=25 1.55 V
VF Forward Voltage IF=8ATJ=175 2.1 V
IR Reverse Current VR = 650 V, TJ= 25 1 A
IR Reverse Current VR = 650 V, TJ= 175 4 A
QC Total Capacitive Charge VR = 400 V, TJ = 25 16 nC
C Total Capacitance VR = 0 V, f = 1MHz 281 pF
C Total Capacitance VR = 200 V, f = 1MHz 30 pF
C Total Capacitance VR = 400 V, f = 1MHz 28 pF
EC Capacitance Stored Energy VR = 400 V, TC = 25 3.8 J
Part Number BCH65S08D4
Top Marking BCH65S08D4
Package TO220-2
Packing Method Tube
Quantity 50 units

2512111635_Bestirpower-BCH65S08D4_C53152686.pdf

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