252 Package N Channel MOSFET ASDsemi ASDM20N60KQ R designed for DC DC converter and power management
Key Attributes
Model Number:
ASDM20N60KQ-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
980pF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
23nC@8V
Mfr. Part #:
ASDM20N60KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM20N60 is a 20V N-Channel MOSFET designed for high-performance applications. It features low gate charge, enhancement mode operation, and fast switching capabilities, making it suitable for power and current handling. Key applications include primary bridge and synchronous rectification in DC/DC converters.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Model Series: ASDM20N60
- Channel Type: N-Channel
- Package Type: TO-252
- Certifications: Halogen Free (available)
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | |||||
| VDSS (Drain-Source Voltage) | 20 | V | |||
| VGSS (Gate-Source Voltage) | 12 | V | |||
| TJ (Maximum Junction Temperature) | 150 | C | |||
| TSTG (Storage Temperature Range) | -55 | 150 | C | ||
| IS (Diode Continuous Forward Current) | TC=25C, Mounted on Large Heat Sink | 60 | A | ||
| IDP (300s Pulse Drain Current) | TC=25C | 200 | A | ||
| ID (Continuous Drain Current) | VGS=8V, TC=25C | 60 | A | ||
| EAS (Avalanche Energy, Single Pulsed) | 120 | mJ | |||
| PD (Maximum Power Dissipation) | TC=25C | 60 | W | ||
| PD (Maximum Power Dissipation) | TC=100C | 25 | W | ||
| RJC (Thermal Resistance-Junction to Case) | 3 | C/W | |||
| Product Summary | |||||
| BVDSS | 20 | V | |||
| RDS(on),Typ. | VGS=4.5 V | 5 | m | ||
| ID | 60 | A | |||
| Electrical Characteristics (TA=25C Unless Otherwise Noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, IDS=250A | 20 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS= 20V, VGS=0V | 1 | A | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS= 20V, VGS=0V, TJ=85C | 30 | A | ||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, IDS=250A | 0.4 | 0.7 | 1.5 | V |
| IGSS (Gate Leakage Current) | VGS=12V, VDS=0V | 100 | nA | ||
| RDS(ON) | VGS= 4.5V, IDS=25A | 5 | 6.5 | m | |
| RDS(ON) | VGS= 2.5V, IDS=20A | 7 | 10 | m | |
| VSD (Diode Forward Voltage) | ISD=25A, VGS=0V | 1.2 | V | ||
| trr (Reverse Recovery Time) | ISD=25A, dlSD/dt=100A/s | 14 | ns | ||
| Qrr (Reverse Recovery Charge) | 32 | nC | |||
| Ciss (Input Capacitance) | VGS=0V, VDS=15V, Frequency=1.0MHz | 980 | pF | ||
| Coss (Output Capacitance) | 160 | pF | |||
| Crss (Reverse Transfer Capacitance) | 80 | pF | |||
| td(ON) (Turn-on Delay Time) | VDD=15V, RL=15, IDS=25A, VGEN= 8V, RG=6 | 6 | ns | ||
| tr (Turn-on Rise Time) | ns | ||||
| td(OFF) (Turn-off Delay Time) | 24 | ns | |||
| tf (Turn-off Fall Time) | 5 | ns | |||
| Qg (Total Gate Charge) | VDS=15V, VGS= 8V, IDS=25A | 18 | 23 | nC | |
| Qgs (Gate-Source Charge) | 2.5 | nC | |||
| Qgd (Gate-Drain Charge) | 5 | nC | |||
| RG (Gate Resistance) | VGS=0V,VDS=0V,F=1MHz | 1.2 | |||
Ordering and Marking Information
| Device Marking | Package | Packaging | Quantity |
|---|---|---|---|
| 20N60 | TO-252 | Tape&Reel | 2500/Reel |
| 20N60G (Halogen Free) | TO-252 | Tape&Reel | 2500/Reel |
| Ordering Number | Package Type | Green Package | Packing Type |
|---|---|---|---|
| ASDM20N60-KQ-R | KQ: TO-252 | Lead Free | R:Tape Reel |
| ASDM20N60G-KQ-R | KQ: TO-252 | G:Halogen Free | R:Tape Reel |
2410010403_ASDsemi-ASDM20N60KQ-R_C2972874.pdf
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