High voltage MOSFET ARK micro FTE03R20D with halogen free RoHS compliance and low input capacitance
Key Attributes
Model Number:
FTE03R20D
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
RDS(on):
3Ω;6Ω
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.82pF;6.4pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
178.2pF;228.3pF
Gate Charge(Qg):
5.15nC@10V
Mfr. Part #:
FTE03R20D
Package:
SOP-8
Product Description
Product Overview
The FTE03R20D from ARK Microelectronics is a 200V N-Channel and P-Channel enhancement-mode MOSFET featuring a rugged polysilicon gate cell structure. It offers integrated gate-to-source resistor and Zener diode for enhanced protection, low on-resistance, low threshold voltage, low input capacitance, and low leakage. This MOSFET is designed for fast switching speeds, is free from secondary breakdown, and is available in Halogen-free and RoHS compliant versions. It is suitable for various applications including amplifiers, buffers, general-purpose line drivers, high-voltage pulsers, logic-level interfaces, and piezoelectric transducer drivers.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: FTE03R20D
- Certifications: Halogen-free Available, RoHS Compliant
- Package: SOP-8
Technical Specifications
| Parameter | N-Channel (Typ.) | P-Channel (Typ.) | Unit | Test Conditions |
| Drain-to-Source Breakdown Voltage (BVDSX) | 200 | -200 | V | VGS=0V, ID=250A |
| Continuous Drain Current (ID) | 2 | -2 | A | TA=25 |
| Pulsed Drain Current (IDM) | 6 | -6 | A | TA=25 |
| Power Dissipation (PD) | 2.5 | W | TA=25 | |
| Static Drain-to-Source On-Resistance (RDS(ON)) | 3 | 5 | VGS=10V, ID=1A (N-Ch) / VGS=-10V, ID=-1A (P-Ch) | |
| Gate Threshold Voltage (VGS(TH)) | 1.0 - 2.4 | -1.0 - -2.4 | V | ID=250A (N-Ch) / ID=-250A (P-Ch) |
| Input Capacitance (Ciss) | 178.2 | 228.3 | pF | VGS=0V, VDS=25V, f=1.0MHz |
| Output Capacitance (Coss) | 34.0 | 35.5 | pF | VGS=0V, VDS=25V, f=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 3.82 | 6.4 | pF | VGS=0V, VDS=25V, f=1.0MHz |
| Total Gate Charge (Qg) | 5.15 | 6.5 | nC | VGS=10V (N-Ch) / VGS=-10V (P-Ch), VDS=25V, ID=1A |
| Turn-on Delay Time (td(on)) | 5.2 | 3.8 | ns | VGS=10V (N-Ch) / VGS=-10V (P-Ch), VDD=25V, ID=1A, RG=25 |
| Rise Time (trise) | 2.6 | 8.9 | ns | VGS=10V (N-Ch) / VGS=-10V (P-Ch), VDD=25V, ID=1A, RG=25 |
| Turn-off Delay Time (td(off)) | 15 | 18.8 | ns | VGS=10V (N-Ch) / VGS=-10V (P-Ch), VDD=25V, ID=1A, RG=25 |
| Fall Time (tfall) | 4.4 | 6.6 | ns | VGS=10V (N-Ch) / VGS=-10V (P-Ch), VDD=25V, ID=1A, RG=25 |
| Diode Forward Voltage (VSD) | 1.8 | -2.0 | V | ISD=500mA, VGS=0V |
2504101957_ARK-micro-FTE03R20D_C46532093.pdf
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