High Frequency Silicon Carbide Power MOSFET Bestirpower BCW120N60M2 with Robust Avalanche Capability
Key Attributes
Model Number:
BCW120N60M2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
57A
Operating Temperature -:
-55℃~+175℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Pd - Power Dissipation:
306W
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
2.236nF
Gate Charge(Qg):
97.3nC
Mfr. Part #:
BCW120N60M2
Package:
TO-247
Product Description
Bestirpower BCW120N60M2 Silicon Carbide Power MOSFET
The Bestirpower BCW120N60M2 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It features high switching speeds with low gate charge and a fast intrinsic diode with low reverse recovery, contributing to improved system efficiency and higher frequency applicability. Its robust avalanche capability, confirmed by 100% avalanche testing, ensures reliability. This RoHS compliant and Halogen Free component is ideal for applications such as solar inverters, ESS, UPS, EV charging stations, server & telecom power, and industrial power supplies, enabling increased power density and reduced cooling requirements.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TJ = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V (TC = 25) | 57 | A | ||
| VGS = 18 V (TC = 100) | 40 | A | ||||
| IDM | Drain Current Pulsed (Note 1) | 198 | A | |||
| PD | Power Dissipation (TC = 25) | 306 | W | |||
| Derate Above 25 | 2.04 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.49 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 26.55 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | - | 1 | 10 | A |
| VDS = 1200 V, VGS = 0 V, TJ = 175 | - | - | 100 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | - | - | +200 | nA |
| VGS = -10 V, VDS = 0 V | - | - | -200 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 10 mA | 2 | 2.6 | 3.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 30 A | - | 60 | 70 | m |
| VGS = 15 V, ID = 30 A, TJ = 175 | - | 98 | - | m | ||
| VGS = 18 V, ID = 30 A | 50 | 60 | - | m | ||
| VGS = 18 V, ID = 30 A, TJ = 175 | - | 93 | - | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 30 A | - | 18 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 1 MHz | - | 2236 | - | pF |
| Coss | Output Capacitance | - | 89 | - | pF | |
| Crss | Reverse Capacitance | - | 2 | - | pF | |
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | - | 75 | - | J |
| Co(er) | Energy Related Output Capacitance | - | 188 | - | pF | |
| Co(tr) | Time Related Output Capacitance | - | 226 | - | pF | |
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, Inductive load | - | 97.3 | - | nC |
| Qgs | Gate to Source Charge | - | 22.7 | - | nC | |
| Qgd | Gate to Drain Miller Charge | - | 23.2 | - | nC | |
| RG | Internal Gate Resistance | f = 1MHz, VAC=25mV open drain | - | 3.5 | - | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 3.3, FWD : body diode at VGS=-5V, Inductive load | - | 11.15 | - | ns |
| tr | Turn-On Rise Time | - | 23.25 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 17.91 | - | ns | |
| tf | Turn-Off Fall Time | - | 8 | - | ns | |
| Eon | Turn-on Switching Energy | - | 402 | - | J | |
| Eoff | Turn-off Switching Energy | - | 40.07 | - | J | |
| Etot | Total Switching Energy | - | 442.07 | - | J | |
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | - | - | 57 | A | |
| ISM | Maximum Pulsed Diode Forward Current | - | - | 198 | A | |
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 30 A | - | 4.5 | - | V |
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s, Includes QOSS | - | 11.1 | - | ns |
| Qrr | Reverse Recovery Charge | - | 58.83 | - | nC | |
| IRRM | Peak Reverse Recovery Current | - | 10.6 | - | A | |
Package Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCW120N60M2 | BCW120N60M2 | TO247-3L | Tube | 30 units |
2509021810_Bestirpower-BCW120N60M2_C51346559.pdf
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