Power Management Device ASDsemi ASDM30N120Q-R 30V N-Channel MOSFET with Fast Switching and Low RDSon
Key Attributes
Model Number:
ASDM30N120Q-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
410pF
Number:
1 N-channel
Output Capacitance(Coss):
434pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.88nF
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
ASDM30N120Q-R
Package:
DFN5x6-8
Product Description
Product Overview
The ASDM30N120Q is a 30V N-Channel MOSFET from Ascend Semiconductor, designed for high-performance applications. It features enhancement mode operation, very low on-resistance (RDS(on)) at VGS=4.5V, fast switching speeds, and is 100% avalanche tested. This RoHS compliant and Pb-free product is suitable for various industrial applications requiring efficient power management.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend
- Compliance: Pb-free lead plating; RoHS compliant
- Package Type: DFN5x6-8
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (at TA =25C, unless otherwise specified) | ||||||
| (BR)DSS | Drain-Source breakdown voltage | 30 | V | |||
| IS | Diode continuous forward current | TC =25C | 120 | A | ||
| ID | Continuous drain current@VGS=10V | TC =25C | 120 | A | ||
| ID | Continuous drain current@VGS=10V | TC =100C | 80 | A | ||
| IDM | Pulse drain current | TC =25C | 480 | A | ||
| EAS | Avalanche energy, single pulsed | 100 | mJ | |||
| PD | Maximum power dissipation | TC =25C | 45 | W | ||
| VGS | Gate-Source voltage | 20 | V | |||
| TSTG, TJ | Storage and operating temperature range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance-Junction to Case | 1.8 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | C/W | |||
| Static Electrical Characteristics @ Tj=25C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V,VGS=0V | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V,VGS=0V | -- | -- | 30 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.0 | 1.5 | 2 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=30A | -- | 2.1 | 3.5 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=30A | -- | 3.6 | 4.5 | m |
| Dynamic Electrical Characteristics @ Tj = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=15V,VGS=0V, f=1MHz | -- | 2880 | -- | pF |
| Coss | Output Capacitance | -- | 434 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 410 | -- | pF | |
| Rg | Gate Resistance | f=1MHz | -- | 1.2 | -- | |
| Qg | Total Gate Charge | VDS=15V,ID=20A, VGS=10V | -- | 63 | -- | nC |
| Qgs | Gate-Source Charge | -- | 13 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 16 | -- | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=20V, ID=20A, RG=3, VGS=10V | -- | 14 | -- | nS |
| tr | Turn-on Rise Time | -- | 18 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 99 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 45 | -- | nS | |
| Source-Drain Diode Characteristics @ Tj = 25C (unless otherwise stated) | ||||||
| VSD | Forward on voltage | ISD=20A,VGS=0V | -- | 0.79 | 1.2 | V |
| trr | Reverse Recovery Time | Tj=25,Isd=20A, VGS=0V, di/dt=100A/s | -- | 32 | -- | nS |
| Qrr | Reverse Recovery Charge | -- | 31 | -- | nC | |
| Model Information | ||||||
| Model No. | ASDM30N120Q | |||||
| Marking | 30N120 | |||||
| Package | DFN5*6-8 | |||||
| Packing | Tape&Reel | 4000/Reel | ||||
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25C, L = 0.5mH, RG = 25, IAS = 20A, VGS =10V.
Pulse width 300s; duty cycle 2%.
2410121617_ASDsemi-ASDM30N120Q-R_C2972859.pdf
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