ASDsemi ASDM20N90Q R power MOSFET offering 20 volt drain source voltage and 90 amp continuous current
Key Attributes
Model Number:
ASDM20N90Q-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
90A
RDS(on):
2.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
365pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
3.605nF@10V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
36.6nC@10V
Mfr. Part #:
ASDM20N90Q-R
Package:
PDFN5x6-8
Product Description
Product Overview
The ASDM20N90Q is a 20V N-CHANNEL MOSFET from Ascend Semiconductor, designed for power management in inverter systems. It features 100% EAS guaranteed, a green device option, super low gate charge, and excellent CdV/dt effect decline, all enabled by advanced high cell density Trench technology. This MOSFET offers a continuous drain current of 90A at 25C and 75A at 100C, with a low on-state resistance of 1.5 m at VGS=10V and 1.8 m at VGS=4.5V. Its robust design and high performance make it suitable for demanding power applications.
Product Attributes
- Brand: Ascend Semiconductor
- Device Type: N-CHANNEL MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available
- Package Type: PDFN5*6-8
- MSL Level: 3
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| VDS | Drain-Source breakdown voltage | VGS=0V, ID=250A | 20 | -- | -- | V |
| ID | Continuous drain current @VGS=10V | Tc =25C | -- | 90 | -- | A |
| ID | Continuous drain current @VGS=10V | Tc =100C | -- | 75 | -- | A |
| IDM | Pulse drain current | tested TA =25C | -- | 360 | -- | A |
| EAS | Avalanche energy, single pulsed | 105 | -- | -- | mJ | |
| PD | Maximum power dissipation | Tc =25C | -- | 40 | -- | W |
| VGS | Gate-Source voltage | -- | -- | 20 | -- | V |
| TSTG,TJ | Storage and junction temperature range | -- | -55 | -- | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | -- | -- | 1.9 | -- | C/W |
| Electrical Characteristics | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V (Tj=25) | -- | 1 | -- | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V (Tj=125) | -- | -- | 100 | A |
| IGSS | Gate-Body Leakage Current | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.1 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=30A | -- | 1.5 | 2.5 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=20A | -- | 1.8 | 2.8 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V, ID=20A | -- | 2.8 | 4 | m |
| Dynamic Electrical Characteristics | ||||||
| Ciss | Input Capacitance | VDS=10V,VGS=0V, f=1MHz | -- | 3605 | -- | pF |
| Coss | Output Capacitance | -- | -- | 490 | -- | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 365 | -- | pF |
| Rg | Gate Resistance | f=1MHz | -- | 2.4 | -- | |
| Qg | Total Gate Charge | VDS=10V,ID=15A, VGS=10V | -- | 36.6 | -- | nC |
| Qgs | Gate-Source Charge | -- | -- | 6.07 | -- | nC |
| Qgd | Gate-Drain Charge | -- | -- | 13.8 | -- | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=10V, ID=20A, RG=1.5, VGS=6V | -- | 11.2 | -- | nS |
| tr | Turn-on Rise Time | -- | -- | 49 | -- | nS |
| td(off) | Turn-Off Delay Time | -- | -- | 35 | -- | nS |
| tf | Turn-Off Fall Time | -- | -- | 7.8 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | ISD=2A,VGS=0V | -- | 0.8 | 1.2 | V |
| trr | Reverse Recovery Time | Tj=25,Isd=10A, VGS=0V, di/dt=500A/s | -- | 20 | -- | nS |
| Qrr | Reverse Recovery Charge | -- | -- | 11.5 | -- | nC |
Ordering and Marking Information
| Device No. | Marking | Package | Packing Quantity |
|---|---|---|---|
| ASDM20N90Q-R | 20N90 | PDFN5*6-8 | 4000/Reel |
Package Outline Dimensions (Units: mm)
| Symbol | A | b | C | D | D1 | D2 | E | E1 | E2 | e | L | L1 | H | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Value | 1.12 | 0.9 | 0.51 | 0.33 | 0.34 | 0.11 | 5.26 | 4.7 | 5.1 | 4.7 | 4.5 | 3.56 | 6.25 | 5.75 |
| Symbol | 6 | 5.6 | 3.66 | 3.18 | 1.37 | 1.17 | 0.71 | 0.35 | 0.2 | 0.06 | 0.71 | 0.35 | -- |
2411220133_ASDsemi-ASDM20N90Q-R_C2972894.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
