Power MOSFET Bestirpower BMW65N028UA1 Featuring Ultra Fast Body Diode and Low Switching Losses
Key Attributes
Model Number:
BMW65N028UA1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
90A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.6pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
8.172nF@50V
Pd - Power Dissipation:
450W
Gate Charge(Qg):
147nC
Mfr. Part #:
BMW65N028UA1
Package:
TO-247-3L
Product Description
Product Overview
The Bestirpower BMW65N028UA1 is an N-Channel Power MOSFET utilizing advanced super junction technology for exceptionally low on-resistance and gate charge. This design promotes higher efficiency through optimized charge coupling and offers designers advantages such as low EMI and reduced switching losses. It is suitable for demanding applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), LLC Half-bridge configurations, and chargers. The MOSFET features an ultra-fast body diode, a very low FOM (RDS(on)Qg), is easy to use/drive, 100% avalanche tested, and RoHS compliant.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Certifications: RoHS compliant
- Testing: 100% avalanche tested
Technical Specifications
| Model | Description | BVDSS @ TJ,max | ID | RDS(on),max | Qg,typ |
|---|---|---|---|---|---|
| BMW65N028UA1 | N-Channel Power MOSFET | 700 V | 90 A | 28 m | 147 nC |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | 650 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current Continuous (TC = 25) | 90 | A | |||
| ID | Drain Current Continuous (TC = 100) | 57 | A | |||
| IDM | Drain Current Pulsed (note 1) | 270 | A | |||
| EAS | Single Pulse Avalanche Energy (note 2) | 1920 | mJ | |||
| dv/dt | 50 | V/ns | ||||
| PD | Power Dissipation (TC = 25) For TO-247 | 450 | W | |||
| TJ , TSTG | Operating junction and storage temperature | -55 | 150 | |||
| IS | Continuous diode forward current | 90 | A | |||
| IS,pulse | Diode pulse current | 270 | A | |||
| Electrical Characteristics (TJ= 25 unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250uA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V, VGS=0V, TJ=25C | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS =30V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 3 | 5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10V, ID =40A TJ=25 | 24.5 | 28 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10V, ID =40A TJ=125 | 68 | 78 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f=1MHz | 8172 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=50V, f=1MHz | 434 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=50V, f=1MHz | 3.6 | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VGS=10V, VDD=520V, ID=40A | 147 | nC | ||
| Qgs | Gate to Source Charge | VGS=10V, VDD=520V, ID=40A | 50 | nC | ||
| Qgd | Gate to Drain Charge | VGS=10V, VDD=520V, ID=40A | 52 | nC | ||
| RG | Gate Resistance | open drain | 1.05 | |||
| td(on) | Turn-on Delay Time | ID=40A, VDD=400V, Rg=2VGS=10V | 68.5 | ns | ||
| tr | Rise Time | ID=40A, VDD=400V, Rg=2VGS=10V | 207 | ns | ||
| td(off) | Turn-off Delay Time | ID=40A, VDD=400V, Rg=2VGS=10V | 94.7 | ns | ||
| tf | Fall Time | ID=40A, VDD=400V, Rg=2VGS=10V | 4.5 | ns | ||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0V, ISD=50A , TJ=25 | 0.9 | 1.3 | V | |
| trr | Reverse Recovery Time | VR = 400V, IS= 40A, diF/dt = 100A/s | 153 | ns | ||
| Qrr | Reverse Recovery Charge | VR = 400V, IS= 40A, diF/dt = 100A/s | 1.21 | C | ||
| Irrm | Peak Reverse Recovery Current | VR = 400V, IS= 40A, diF/dt = 100A/s | 13.8 | A | ||
| Thermal Characteristics | ||||||
| RthJC | Thermal Resistance, Junction to Case | 0.28 | /W | |||
| RthJA | Thermal Resistance, Junction to Ambient | 62 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
2504141434_Bestirpower-BMW65N028UA1_C47715873.pdf
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