power management with ASDsemi ASDM20P13S-R P Channel MOSFET featuring low RDS ON and fast switching
Key Attributes
Model Number:
ASDM20P13S-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
13A
RDS(on):
13mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
288pF
Input Capacitance(Ciss):
2.16nF
Pd - Power Dissipation:
3.6W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
ASDM20P13S-R
Package:
SOP-8
Product Description
Product Overview
The Ascend Semiconductor ASDM20P13S is a high-performance P-Channel MOSFET designed with advanced high cell density Trench technology. It offers low RDS(ON) for minimal conductive loss and low Gate Charge for fast switching, making it suitable for applications requiring efficient power management. Key applications include MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: P-Channel MOSFET
- Technology: Advance high cell density Trench technology
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| RDS(on),Typ@VGS=-10V | 6.0 | m | ||||
| ID | -13 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC =25) | -20 | V | ||
| Gate-Source Voltage | VGS | (TC =25) | 12 | V | ||
| Continuous Drain Current | ID@TC=25 | -13 | A | |||
| Continuous Drain Current | ID@TC=75 | -8.36 | A | |||
| Continuous Drain Current | ID@TC=100 | -6.93 | A | |||
| Pulsed Drain Current | IDM | -52 | A | |||
| Total Power Dissipation | PD@TC=25 | 3.6 | W | |||
| Total Power Dissipation | PD@TA=25 | 0.69 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature | TSTG | -55 | 150 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Thermal Resistance | ||||||
| Thermal resistance, junction - case | RthJC | - | - | 24 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - | - | 85 | C/W | |
| Static Drain-source On Resistance | ||||||
| RDS(ON) | VGS=-10V, ID=-8A | 6.0 | 13 | m | ||
| RDS(ON) | VGS=-4.5V, ID=-6A | 7.7 | 16 | m | ||
| Forward Transconductance | gFS | VDS =-10V, ID=-5A | 9 | s | ||
| Source-drain voltage | VSD | Is=-9A | 1.28 | V | ||
| Output capacitance | Coss | f = 1MHz | - | 2160 | - | pF |
| Reverse transfer capacitance | Crss | f = 1MHz | - | 288 | - | pF |
| Gate - Source charge | Qgs | - | 15 | - | nC | |
| Gate - Drain charge | Qgd | - | 6 | - | nC | |
| Electronic Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS =0V,ID =-250uA | -20 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS =V DS, ID =-250uA | -0.3 | -0.6 | -1.0 | V |
| Drain-Source Leakage Current | IDSS | VDS=-20V, VGS =0V | - | -1.0 | uA | |
| Gate- Source Leakage Current | IGSS | VGS=12V ,VDS =0V | 100 | nA | ||
| Input capacitance | Ciss | f = 1MHz | - | 2160 | - | pF |
| Gate Charge characteristics | ||||||
| Total gate charge | Qg | VDD =25V ID = 8A VGS = 10V | - | 15 | - | nC |
Notes:
Pulse Test : Pulse width 300s, Duty cycle 2% ;
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
2410121548_ASDsemi-ASDM20P13S-R_C2972879.pdf
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