Silicon Carbide MOSFET 1200V 34A Bestirpower BCW120N80M1 with Low Gate Charge and High Switching Speed
Key Attributes
Model Number:
BCW120N80M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
80mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Input Capacitance(Ciss):
885pF
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
50nC
Mfr. Part #:
BCW120N80M1
Package:
TO-247-3
Product Description
Product Overview
The BCW120N80M1 is a 1200V, 34A N-Channel Silicon Carbide Power MOSFET featuring an 80 m on-resistance. It offers high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. Designed for applications in solar inverters, EV charging stations, UPS, and industrial power supplies, this MOSFET contributes to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort. It is Pb-free, Halogen Free, and RoHS Compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Pb-free, Halogen Free, RoHS Compliant
- Package Type: TO247-3
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TJ = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V, (TC = 25) | 34 | A | ||
| ID | Drain Current | VGS = 18 V, (TC = 100) | 24 | A | ||
| IDM | Drain Current Pulsed (Note 1) | 80 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| Derate Above 25 | 1.00 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | 5 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 5.0 mA (tested after VGS = 22 V, 1 ms pulse) | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A | 80 | 110 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A, TJ = 175 | 128 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 15 A | 11.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 885 | pF | ||
| Coss | Output Capacitance | 65 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 26 | J | ||
| Co(er) | Energy Related Output Capacitance | 81 | pF | |||
| Co(tr) | Time Related Output Capacitance | 142 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, Inductive load | 50 | nC | ||
| Qgs | Gate to Source Charge | 13 | nC | |||
| Qgd | Gate to Drain Miller Charge | 17 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 4.0 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S010D1, Inductive load | 14 | ns | ||
| tr | Turn-On Rise Time | 21 | ns | |||
| td(off) | Turn-Off Delay Time | 24 | ns | |||
| tf | Turn-Off Fall Time | 9 | ns | |||
| Eon | Turn-on Switching Energy | 183 | J | |||
| Eoff | Turn-off Switching Energy | 42 | J | |||
| Etot | Total Switching Energy | 225 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 30 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 80 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 15 A | 4.1 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 15 A, dIF/dt = 3000 A/s, Includes Qoss | 34 | ns | ||
| Qrr | Reverse Recovery Charge | 112 | nC | |||
| BVDSS, Tc=25 | Drain to Source Breakdown Voltage | 1200 | V | |||
| ID, Tc=25 | Drain Current | 34 | A | |||
| RDS(on),typ | Static Drain to Source On Resistance | 80 | m | |||
| Qg,typ | Total Gate Charge | 50 | nC | |||
2512291153_Bestirpower-BCW120N80M1_C49164814.pdf
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