ASDsemi ASDM30N120KQ-R 30V N Channel MOSFET Designed for Industrial Power Management Applications
Key Attributes
Model Number:
ASDM30N120KQ-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
RDS(on):
3.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
416pF
Number:
1 N-channel
Output Capacitance(Coss):
440pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.921nF
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
ASDM30N120KQ-R
Package:
TO-252
Product Description
Product Overview
The ASDM30N120KQ is a 30V N-Channel MOSFET from Ascend Semiconductor, designed for high-performance applications. It features enhancement mode operation, very low on-resistance (RDS(on)) at VGS=4.5V, and fast switching capabilities. This MOSFET is 100% avalanche tested and offers Pb-free lead plating, complying with RoHS standards. It is suitable for various industrial applications requiring efficient power management.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Model: ASDM30N120KQ
- Channel Type: N-Channel
- Compliance: RoHS compliant, Pb-free lead plating
- Origin: Xi'an Ascend Semiconductor Incorporated
- Package Type: TO-252-2L
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (at TA =25C, unless otherwise specified) | ||||||
| (BR)DSS | Drain-Source breakdown voltage | 30 | V | |||
| IS | Diode continuous forward current | TC =25C | 120 | A | ||
| ID | Continuous drain current@VGS=10V | TC =25C | 120 | A | ||
| ID | Continuous drain current@VGS=10V | TC =100C | 80 | A | ||
| IDM | Pulse drain current | TC =25C | 480 | A | ||
| EAS | Avalanche energy, single pulsed | 100 | mJ | |||
| PD | Maximum power dissipation | TC =25C | 45 | W | ||
| VGS | Gate-Source voltage | 20 | V | |||
| TSTG, TJ | Storage and operating temperature range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance-Junction to Case | 2.4 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | C/W | |||
| Static Electrical Characteristics (@ Tj=25C unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V,VGS=0V | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V,VGS=0V | -- | -- | 30 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=30A | -- | 2.5 | 3.5 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=30A | -- | 3.9 | 4.5 | m |
| Dynamic Electrical Characteristics (@ Tj = 25C unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=15V,VGS=0V, f=1MHz | -- | 2921 | -- | pF |
| Coss | Output Capacitance | -- | 440 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 416 | -- | pF | |
| Rg | Gate Resistance | f=1MHz | -- | 1.2 | -- | |
| Qg | Total Gate Charge | VDS=15V,ID=20A, VGS=10V | -- | 63 | -- | nC |
| Qgs | Gate-Source Charge | -- | 13 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 16 | -- | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=20V, ID=20A, RG=3, VGS=10V | -- | 14 | -- | nS |
| tr | Turn-on Rise Time | -- | 18 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 99 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 45 | -- | nS | |
| Source-Drain Diode Characteristics (@ Tj = 25C unless otherwise stated) | ||||||
| VSD | Forward on voltage | ISD=20A,VGS=0V | -- | 0.79 | 1.2 | V |
| trr | Reverse Recovery Time | Tj=25,Isd=20A, VGS=0V, di/dt=100A/s | -- | 32 | -- | nS |
| Qrr | Reverse Recovery Charge | -- | 31 | -- | nC | |
Ordering and Marking Information
| PACKAGE | MARKING | Ordering Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|---|---|
| TO-252 | 30N120 | ASDM30N120KQ-R | 30N120 | TO-252 | Tape&Reel | 2500/Reel |
2410121617_ASDsemi-ASDM30N120KQ-R_C2972858.pdf
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