Load switch MOSFET P Channel ASDsemi ASDM60P12KQ R with TO 252 2L package and low R DS on resistance
Key Attributes
Model Number:
ASDM60P12KQ-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
RDS(on):
70mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF@30V
Number:
-
Input Capacitance(Ciss):
968pF@30V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
ASDM60P12KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM60P12KQ is a -60V P-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current capabilities, along with excellent heat dissipation properties suitable for load switch and PWM applications. This MOSFET offers a continuous drain current of -12A and is available in a TO-252-2L package.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: P-Channel MOSFET
- Package Type: TO-252-2L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| RDS(on) | RDS(on) | VGS=-10V | 62 | 70 | m | |
| Continuous Drain Current | ID | -12 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (TC=25) | 20 | V | ||
| Drain Current-Continuous | ID | (TC=25) | -12 | A | ||
| Pulsed Drain Current | IDM | (TC=25) | -48 | A | ||
| Maximum Power Dissipation | PD | (TC=25) | 50 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.0 | -1.9 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-14A (Note 3) | 62 | 70 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-10A (Note 3) | 78 | 90 | m | |
| Forward Transconductance | gFS | VDS=-5V,ID=-14A (Note 3) | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | (Note 4) | 968 | PF | ||
| Output Capacitance | Coss | (Note 4) | 88 | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V,VGS=0V, F=1.0MHz (Note 4) | 36 | PF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | (Note 4) | 8 | nS | ||
| Turn-on Rise Time | tr | (Note 4) | 4 | nS | ||
| Turn-Off Delay Time | td(off) | (Note 4) | 32 | nS | ||
| Turn-Off Fall Time | tf | VDD=-30V, RL=2 VGS=-10V,RG=3 (Note 4) | 7 | nS | ||
| Total Gate Charge | Qg | (Note 4) | 25 | nC | ||
| Gate-Source Charge | Qgs | (Note 4) | 3 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-30,ID=-14A, VGS=-10V (Note 4) | 7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-14A (Note 3) | -1.2 | V | ||
| Diode Forward Current | IS | (Note 2) | -12 | A | ||
| Reverse Recovery Time | trr | 25 | nS | |||
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =- 14A di/dt = -100A/s(Note3) | 31 | nC | ||
Ordering and Marking Information
| Product | Package | Marking | Packing | Quantity |
|---|---|---|---|---|
| ASDM60P12KQ-R | TO-252 | 60P12 | Tape&Reel | 2500/Reel |
2410121913_ASDsemi-ASDM60P12KQ-R_C2972864.pdf
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