Power MOSFET 800V 23A N Channel Bestirpower BMW80N180C1 with Ultra Fast Body Diode and Rugged Design
Key Attributes
Model Number:
BMW80N180C1
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
23A
RDS(on):
180mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.9pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
2.44nF@100V
Pd - Power Dissipation:
250W
Mfr. Part #:
BMW80N180C1
Package:
TO-247-3L
Product Description
Product Overview
The BMW80N180C1 is an 800V, 23A N-Channel Power MOSFET from Bestirpower, utilizing advanced super junction technology for very low on-resistance and gate charge. This MOSFET offers extremely low losses due to its very low FOM Rdson*Qg and Eoss, contributing to high efficiency through optimized charge coupling technology. Its user-friendly design provides low EMI and low switching loss, making it suitable for applications such as PC power, server power supplies, telecom, LED lighting, EV chargers, and solar/UPS systems. It features an ultra-fast body diode and very high commutation ruggedness.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Package: TO247-3L
- Product Line: Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Features | ||||||
| BVDSS@ TJ,max | Drain to Source Voltage | 850 | V | |||
| ID | Drain Current (Continuous, TC = 25) | 23 | A | |||
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID = 12 A, Tj = 25 | 150 | 180 | m | |
| Qg,typ | Total Gate Charge | VDS = 640 V, ID = 24 A, VGS= 0 to10 V | 56 | nC | ||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage(1) | 800 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current Continuous (TC = 25) | 23 | A | |||
| ID | Drain Current Continuous (TC = 125) | 10 | ID | |||
| IDM | Drain Current Pulsed | 70 | A | |||
| EAS | Single Pulsed Avalanche Energy(3) | 845 | mJ | |||
| IAR | Avalanche Current | 13 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt(4) | 50 | V/ns | ||||
| PD | Power Dissipation (TC= 25) | 250 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.5 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | |||
| IS | Continuous diode forward current | 23 | A | |||
| IS,pulse | Diode pulse current(2) | 70 | A | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250A | 800 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 800 V, VGS = 0 V | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS= 30 V, VDS = 0 V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 250A | 2.5 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 12 A, Tj = 25 | 150 | 180 | m | |
| Ciss | Input Capacitance | VDS = 100 V, VGS= 0 V, f = 250 kHz | 2440 | pF | ||
| Coss | Output Capacitance | 83 | pF | |||
| Crss | Reverse transfer capacitance | 1.9 | pF | |||
| Co(tr) | Time Related Output Capacitance(2) | VDS = 0 to 500 V, VGS = 0 V | 214 | pF | ||
| Co(er) | Energy Related Output Capacitance | 66 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDS = 640 V, ID = 24 A, VGS= 0 to10 V | 56 | nC | ||
| Qgs | Gate Charge total | 15 | nC | |||
| Qgd | Gate to Drain Miller Charge | 21 | nC | |||
| Vplateau | Gate plateau voltage | 3.5 | V | |||
| RG | Gate Resistance | f = 1 MHz | 4 | |||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 12 A, VGS= 10 V | 20 | ns | ||
| tr | Turn-On Rise Time | 13 | ns | |||
| td(off) | Turn-Off Delay Time | 117 | ns | |||
| tf | Turn-Off Fall Time | 12 | ns | |||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 12A, Tf = 25 | 0.8 | V | ||
| trr | Reverse Recovery Time | VR = 60 V, IF = 24 A, diF/dt = 100 A / s | 375 | ns | ||
| Qrr | Reverse Recovery Charge | 6.7 | C | |||
| Irrm | Peak reverse recovery current | 29 | A | |||
| Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BMW80N180C1 | BMW80N180C1 | TO247 | Tube | 30 units | ||
2412181615_Bestirpower-BMW80N180C1_C42401708.pdf
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