1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics
Silicon Carbide Power MOSFET
The BCBF170N650T1 is a 1700V, 8A, 650m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers superior performance characteristics, including high blocking voltage, low on-resistance, and high-speed switching capabilities. These features contribute to higher system efficiency, reduced cooling requirements, increased power density, and the enablement of higher operating frequencies. The device is suitable for applications such as DC/DC converters, solar inverters, battery chargers, motor drives, and auxiliary power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Channel Type: N-Channel
- Package: TO263-7
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1700 | V | |||
| VGSmax | Gate to Source Voltage (AC f1Hz) | -10 / +25 | V | |||
| VGSop | Recommended Operation Value | -5 | +20 | V | ||
| ID | Drain Current | VGS=15V, (TC = 25) | 8 | A | ||
| IDM | Drain Current Pulsed (Note 1) | 17 | A | |||
| PD | Power Dissipation (TC = 25) | 78 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.92 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| V(BR)DSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100 A | 1700 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1700 V, VGS = 0 V | 0.9 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +20 V | 250 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 0.5 mA | 1.8 | 4.0 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 20 V, ID = 2 A | 550 | 1000 | m | |
| VGS = 18 V, ID = 2 A | 650 | m | ||||
| ID | Drain Current | VGS=20V, (TC = 25) | 8.6 | A | ||
| ID | Drain Current | VGS=15V, ( TC = 100) | 6 | A | ||
| Ciss | Input Capacitance | VGS = 0V, VDS = 1000 V, f = 1.0 MHz ,VAC = 25 mV | 183 | pF | ||
| Coss | Output Capacitance | 17.1 | pF | |||
| Crss | Reverse Capacitance | 2.1 | pF | |||
| Eoss | Stored Energy in Output Capacitance | 10.1 | J | |||
| Qg(tot) | Total Gate Charge | VDS = 1200 V, ID = 2 A, VGS = -5 V / +20 V | 13.2 | nC | ||
| Qgs | Gate to Source Charge | 5.0 | nC | |||
| Qgd | Gate to Drain Miller Charge | 4.5 | nC | |||
| RG | Internal Gate Resistance | f = 1.0 MHz, VAC = 25 mV | 25.2 | |||
| td(on) | Turn-On Delay Time | VDS = 1000 V, ID = 2 A, VGS = -5 V / +20V, RG(ext) = 2.5 , L = 70 mH | 5 | ns | ||
| tr | Turn-On Rise Time | 17 | ns | |||
| td(off) | Turn-Off Delay Time | 13 | ns | |||
| tf | Turn-Off Fall Time | 55.6 | ns | |||
| Eon | Turn-on Switching Energy | 170 | J | |||
| Eoff | Turn-off Switching Energy | 68 | J | |||
| IS | Maximum Continuous Diode Forward Current | 8 | A | |||
| VSD | Diode Forward Voltage | VGS = 0 V, IS = 1 A | 4.0 | V | ||
| trr | Reverse Recovery Time | VDS = 1200 V, IS = 2 A, VGS=-5V, di/dt = 1200 A/ s | 33 | ns | ||
| Qrr | Reverse Recovery Charge | 32 | nC | |||
| Irrm | Peak Reverse Recovery Current | 2.8 | A | |||
Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCBF170N650T1 | BCBF170N650T1 | TO263-7 | Tape & Reel | 800 units |
2509041652_Bestirpower-BCBF170N650T1_C49297070.pdf
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