30V N Channel MOSFET power transistor ASDsemi ASDM3400ZB-R suitable for PWM load switch applications
Key Attributes
Model Number:
ASDM3400ZB-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
823pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
ASDM3400ZB-R
Package:
SOT-23-3
Product Description
Product Overview
The ASDM3400ZB is a 30V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It offers high power and current handling capabilities, making it suitable for PWM applications, load switches, and power management. This lead-free product is available in a surface mount SOT23-3 package.Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Line: Ascend
- Type: N-Channel MOSFET
- Package: SOT23-3
- Lead Free: Yes
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250A | 30 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 0.7 | 1.1 | 1.4 | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | 1 | 100 | A | |
| Gate-Body Leakage Current (IGSS) | VDS=0V, VGS= 12V | 100 | nA | ||
| On state drain current (ID(ON)) | VGS=4.5V, VDS=5V | 30 | A | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=5A | 32 | 40 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=5.8A | 29 | 32 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=5.8A (TJ=125C) | 39 | 52 | m | |
| Forward Transconductance (gFS) | VDS=5V, ID=5A | 15 | S | ||
| Diode Forward Voltage (VSD) | IS=1A, VGS=0V | 0.77 | 1 | V | |
| Maximum Body-Diode Continuous Current (IS) | VGS=2.5V, ID=4A | 30 | A | ||
| Maximum Body-Diode Continuous Current (IS) | VGS=4.5V, ID=5A | 40 | A | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, f=1MHz | 823 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=15V, f=1MHz | 99 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=15V, f=1MHz | 77 | pF | ||
| Gate resistance (Rg) | VGS=0V, VDS=0V, f=1MHz | 2 | 6 | ||
| Turn-On DelayTime (tD(on)) | VGS=10V, VDS=15V, RL=2.6, RGEN=3 | 3.3 | ns | ||
| Turn-On Rise Time (tr) | VGS=10V, VDS=15V, RL=2.6, RGEN=3 | 4.8 | ns | ||
| Turn-Off DelayTime (tD(off)) | VGS=10V, VDS=15V, RL=2.6, RGEN=3 | 26.3 | ns | ||
| Turn-Off Fall Time (tf) | VGS=10V, VDS=15V, RL=2.6, RGEN=3 | 4.1 | ns | ||
| Continuous Drain Current (ID) | TA=25C | 5.8 | A | ||
| Continuous Drain Current (ID) | TA=70C | 4.9 | A | ||
| Pulsed Drain Current (IDM) | t 10s | 30 | A | ||
| Drain-Source Voltage (VDS) | Absolute Maximum Rating | 30 | V | ||
| Gate-Source Voltage (VGS) | Absolute Maximum Rating | 12 | V | ||
| Junction and Storage Temperature Range (TJ, TSTG) | Absolute Maximum Rating | -55 | 150 | C | |
| Power Dissipation (PD) | TA=25C, Steady-State | 1.4 | W | ||
| Maximum Junction-to-Lead Thermal Resistance (RJL) | Steady-State | 0.9 | C/W | ||
| Maximum Junction-to-Ambient Thermal Resistance (RJA) | TA=25C | 70 | C/W | ||
| Maximum Junction-to-Ambient Thermal Resistance (RJA) | TA=70C | 100 | C/W | ||
| Maximum Junction-to-Ambient Thermal Resistance (RJA) | TA=70C (on 1in FR-4 board) | 90 | C/W |
2410121841_ASDsemi-ASDM3400ZB-R_C2758232.pdf
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