N Channel Silicon Carbide MOSFET 1700V 5A Bestirpower BCBF170N1000P1 for DC DC Converter Applications
Key Attributes
Model Number:
BCBF170N1000P1
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1Ω@18V
Gate Threshold Voltage (Vgs(th)):
3.1V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
182pF
Pd - Power Dissipation:
51W
Output Capacitance(Coss):
11.2pF
Gate Charge(Qg):
16.2nC
Mfr. Part #:
BCBF170N1000P1
Package:
TO-263-7L
Product Description
Product Overview
The Bestirpower BCBF170N1000P1 is a 1700V, 5A N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. This MOSFET is avalanche rugged, resistant to latch-up, and is Halogen Free and RoHS Compliant. Key applications include LED lighting power supplies, high voltage DC/DC converters, industrial power supplies, and HVAC systems.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Compliance: Halogen Free, RoHS Compliant
Technical Specifications
| Model | Description | Voltage | Current | On-Resistance (Typ.) | Gate Charge (Typ.) | Package | Top Marking | Packing Method | Quantity |
|---|---|---|---|---|---|---|---|---|---|
| BCBF170N1000P1 | N-Channel Silicon Carbide Power MOSFET | 1700 V | 5 A | 1000 m | 16.2 nC | TO263-7 | BCBF170N1000P1 | Tape & Reel | 800 units |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1700 | V | |||
| VGSmax | Gate to Source Voltage (AC f1Hz) | -10 | +25 | V | ||
| VGSop | Recommended Operation Value | -5 | +20 | V | ||
| ID | Drain Current | VGS=15V, (TC = 25) | 5 | A | ||
| ID | Drain Current | VGS=20V, (TC = 25) | 8.6 | A | ||
| ID | Drain Current | VGS=15V, ( TC = 100) | 3.5 | A | ||
| IDM | Drain Current Pulse Width | Limited by TJmax | 9.9 | A | ||
| PD | Power Dissipation | (TC = 25), TJ=175 | 51 | W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 2.94 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100 A | 1700 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1700 V, VGS = 0 V | 1 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +20 V | 250 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 0.5 mA | 2 | 4.0 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 20 V, ID = 2 A | 1000 | 1200 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 1200 V f = 1.0 MHz ,VAC = 25 mV | 182 | pF | ||
| Coss | Output Capacitance | 11.2 | pF | |||
| Crss | Reverse Capacitance | 1.8 | pF | |||
| Eoss | Stored Energy in Output Capacitance | 9.3 | J | |||
| Qg(tot) | Total Gate Charge | VDS = 1200 V, ID = 2 A VGS = -5 V / +20 V | 16.2 | nC | ||
| Qgs | Gate to Source Charge | 2.6 | nC | |||
| Qgd | Gate to Drain Miller Charge | 12.7 | nC | |||
| RG | Internal Gate Resistance | f = 1.0 MHz, VAC = 25 mV | 5 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 1200 V ID = 2 A VGS = -5 V / +20V RG(ext) = 2.2 L = 10 mH | 17 | ns | ||
| tr | Turn-On Rise Time | 15 | ns | |||
| td(off) | Turn-Off Delay Time | 16 | ns | |||
| tf | Turn-Off Fall Time | 94 | ns | |||
| Eon | Turn-on Switching Energy | 58.4 | J | |||
| Eoff | Turn-off Switching Energy | 1.7 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 5 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, IS = 1 A | 3.8 | V | ||
| trr | Reverse Recovery Time | VDS = 1200 V, IS = 2 A, VGS=-5V, dif/dt = 235 A/ s | 15.1 | ns | ||
| Qrr | Reverse Recovery Charge | 37.4 | nC | |||
| Irrm | Peak Reverse Recovery Current | 4.6 | A | |||
2511061735_Bestirpower-BCBF170N1000P1_C52269251.pdf
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