Double silicon npn transistor BLUE ROCKET MMDT3904 low current halogen free sot363 package component

Name: Double silicon npn transistor BLUE ROCKET MMDT3904 low current halogen free sot363 package component
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMDT3904
Availability: InStock

Key Attributes

Model Number: MMDT3904

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

200mW

Transition Frequency(fT):

300MHz

Type:

NPN

Number:

2 NPN

Current - Collector(Ic):

200mA

Collector - Emitter Voltage VCEO:

40V

Mfr. Part #:

MMDT3904

Package:

SOT-363

Product Description

Product Overview

The MMDT3904 is a double silicon NPN transistor housed in a SOT-363 plastic package. Designed for general-purpose amplification and switching applications, this low-voltage, low-current transistor is a halogen-free product. It is suitable for various electronic circuits requiring reliable amplification and switching functionalities.

Product Attributes

Product Type: Double Silicon NPN Transistor
Package Type: SOT-363 Plastic Package
Certifications: HF Product (Halogen-Free)
Usage: General purpose amplifier and switching

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	60	V
Collector to Emitter Voltage	VCEO	40	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	200	mA
Collector Power Dissipation	PC	200	mW
Collector Power Dissipation (on ceramic board)	*PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A IE=0			60	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA IB=0			40	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=30V IE=0		0.05		A
Emitter Cut-Off Current	IEBO	VEB=3.0V IC=0		0.05		A
DC Current Gain	hFE(1)	VCE=1.0V IC=10mA	100		300
DC Current Gain	hFE(2)	VCE=1.0V IC=100mA		30
DC Current Gain	hFE(3)	VCE=1.0V IC=50mA		60
DC Current Gain	hFE(4)	VCE=1.0V IC=1.0mA		70
DC Current Gain	hFE(5)	VCE=1.0V IC=0.1mA		40
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA IB=1.0mA		0.2		V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA IB=5.0mA		0.3		V
Base-Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA IB=1.0mA		0.65	0.85	V
Base-Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA IB=5.0mA			0.95	V
Transition Frequency	fT	VCE=20V IC=10mA f=100MHz		300		MHz
Output Capacitance	Cob	VCB=5.0V f=1.0MHz			4.0	pF
Storage Time	tstg	VCC=3.0V IC=10mA IB1=-IB2=1.0mA			200	ns
Fall Time	tf	VCC=3.0V IC=10mA IB1=-IB2=1.0mA			50	ns
Delay Time	td	VCC=3.0V VBE=0.5V IC=10mA IB1=1.0mA			35	ns
Rise Time	tr	VCC=3.0V VBE=0.5V IC=10mA IB1=1.0mA			35	ns
Input Capacitance	Cib	VEB=0.5V f=1.0MHz			8.0	pF

Packaging Information

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box
SOT-363 (Reel)	3,000	10	30,000	6	180,000

Marking Instructions

Marking includes: "1" Pin indicator, "MA" for Product Type Code, and "***" for Lot No. Code which changes with the production batch.

Soldering Profile

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 150180, Time: 6090 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 210/sec.

Resistance to Soldering Heat Test Conditions:

Temperature: 2605
Time: 101 sec.

2410121228_BLUE-ROCKET-MMDT3904_C5328701.pdf

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