Trench FS IGBT Bestirpower BGH65N50L1 650V 50A for Power Conversion and Industrial Applications
Key Attributes
Model Number:
BGH65N50L1
Product Custom Attributes
Td(off):
139.7ns
Pd - Power Dissipation:
484W
Td(on):
22.2ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
19pF
Input Capacitance(Cies):
4.093nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@500uA
Operating Temperature:
-
Gate Charge(Qg):
135nC@15V
Output Capacitance(Coes):
73pF
Switching Energy(Eoff):
770uJ
Turn-On Energy (Eon):
740uJ
Mfr. Part #:
BGH65N50L1
Package:
TO-220-3
Product Description
Bestirpower BGH65N50L1: 650V 50A Trench FS IGBT for High-Efficiency Power Conversion
The Bestirpower BGH65N50L1 is a high-performance Trench FS IGBT designed for demanding power electronics applications. Leveraging Bestirpower's advanced technology, this IGBT achieves exceptionally low gate charge, leading to significantly higher efficiency through optimized gate charge management. Its user-friendly design contributes to low EMI and reduced switching losses, making it an ideal choice for designers seeking robust and efficient solutions. Key applications include resonant converters, uninterruptible power supplies (UPS), and welding converters.
Product Attributes
- Brand: Bestirpower
- Technology: Trench FS IGBT
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VCE | Collector-emitter voltage | (Tvj 25 C) | 650 | V | |||
| VGE | Gate-emitter voltage | 20 | V | ||||
| IC | DC collector current, limited by Tvjmax | TC = 25 | 80 | A | |||
| IC | DC collector current, limited by Tvjmax | TC = 100 | 50 | A | |||
| ICpulse | Pulsed collector current, tp limited by Tvjmax | 200 | A | ||||
| Ptot | Power Dissipation | TC = 25 | 484 | W | Fig.8 | ||
| Ptot | Power Dissipation | TC = 100 | 242 | W | |||
| TJ | Junction temperature range | -40 | ~ | 175 | |||
| TSTG | Storage temperature range | -40 | ~ | 175 | |||
| Thermal Resistance | |||||||
| RthJC | IGBT thermal resistance, junction-case | 0.31 | /W | ||||
| RthJA | Thermal resistance, junction-to-ambient | 41.43 | /W | ||||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | |||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | |||||||
| V(BR)CES | Collector-emitter Breakdown Voltage | VGE=0V, IC=200A | 650 | - | - | V | |
| ICES | Collector Cut-off Current | VCE=650V, VGS=0V | - | - | 50 | A | |
| IGES | Gate-emitter Leakage Current | VGE=20V, VGE=0V | - | - | 100 | nA | |
| VGE(TH) | Gate Threshold Voltage | VCE=VGE, IC=500A | 3.2 | 4.0 | 4.8 | V | Fig.5 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=25 | - | 1.4 | 1.75 | V | Fig.4 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=175 | - | 1.58 | - | V | |
| Dynamic Characteristics | |||||||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f=1MHz | - | 4093 | - | pF | Fig.6 |
| Coes | Output Capacitance | - | 73 | - | pF | ||
| Cres | Reverse Transfer Capacitance | - | 19 | - | pF | ||
| Switching Parameters | |||||||
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=25 | - | 22.2 | - | ns | |
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=150 | - | 21.8 | - | ns | |
| tr | Rise Time | TJ=25 | - | 30.2 | - | ns | |
| tr | Rise Time | TJ=150 | - | 32.1 | - | ns | |
| td(off) | Turn-off Delay Time | TJ=25 | - | 139.7 | - | ns | |
| td(off) | Turn-off Delay Time | TJ=150 | - | 164.7 | - | ns | |
| tf | Fall Time | TJ=25 | - | 63.5 | - | ns | |
| tf | Fall Time | TJ=150 | - | 97.3 | - | ns | |
| Eon | Turn-on Switching Energy | TJ=25 | - | 0.74 | - | mJ | |
| Eon | Turn-on Switching Energy | TJ=150 | - | 0.84 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=25 | - | 0.77 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=150 | - | 1.17 | - | mJ | |
| Gate Charge Characteristics | |||||||
| Qg | Gate Charge Total | VCC=520V, IC=50A, VGE=0 to 15V | - | 135 | - | nC | Fig.7 |
| Qgc | Gate-emitter charge | - | 35 | - | nC | ||
| Qge | Gate-collector charge | - | 22 | - | nC | ||
Key Features
- Maximum junction temperature TJmax = 175C
- Low saturation voltage VCEsat = 1.4 V at TJ = 25C
- VCEsat has a positive temperature coefficient, suitable for parallel applications
- Low gate charge for improved efficiency
- Reduced switching losses and low EMI
Applications
- Resonant converters
- Uninterruptible power supplies
- Welding converters
2509021810_Bestirpower-BGH65N50L1_C51346561.pdf
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