Super Junction Power MOSFET Bestirpower BMW65N038UC1 Providing and Low EMI for Server Power Supplies
Key Attributes
Model Number:
BMW65N038UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.8pF@50V
Input Capacitance(Ciss):
5nF@50V
Pd - Power Dissipation:
500W
Gate Charge(Qg):
100nC
Mfr. Part #:
BMW65N038UC1
Package:
TO247-3L
Product Description
Product Overview
The BMW65N038UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This MOSFET offers significantly higher efficiency due to its optimized charge coupling technology, leading to extremely low losses with a very low FOM (Rdson*Qg and Eoss). It provides designers with the advantage of low EMI and low switching loss, making it ideal for demanding applications such as PC power supplies, server power supplies, telecom equipment, solar inverters, and automotive super chargers. The device is also characterized by very high commutation ruggedness and is 100% UIS tested.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
Technical Specifications
| Model | Description | Key Features | Voltage (VDSS) | Current (ID) | On-Resistance (RDS(on)max) | Gate Charge (Qg,typ) |
|---|---|---|---|---|---|---|
| BMW65N038UC1 | Super Junction Power MOSFET | Extremely low losses, Low EMI, High efficiency | 650 V | 78 A | 38 m | 100 nC |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage(1) | 650 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current(2) | VGS = 10 V, (TC = 25) | 78 | A | ||
| ID | Drain Current(2) | VGS = 10 V, (TC = 100) | 49 | A | ||
| IDM | Drain Current Pulsed | 234 | A | |||
| EAS | Single Pulsed Avalanche Energy(3) | 1600 | mJ | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt | 50 | V/ns | ||||
| PD | Power Dissipation (TC = 25) | 500 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| IS | Continuous diode forward current | 78 | A | |||
| ISP | Pulse Diode pulse current(2) | 234 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.25 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | ||||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ=25C | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| V(GS)th | Gate Threshold Voltage | VGS = VDS , ID = 250 uA | 3.5 | 5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID =40 A | 34 | 38 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0 V,VDS = 50 V, f = 100 KHz | 5000 | pF | ||
| Coss | Output Capacitance | 315 | pF | |||
| Co(tr) | Time Related Output Capacitance(2) | VDS = 0 V to 400 V, VGS = 0 V | 974 | pF | ||
| Co(er) | Energy Related Output Capacitance(1) | 20.3 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 80 A, VGS =0 to 10 V | 100 | nC | ||
| Qgs | Gate to Source Charge | 35 | nC | |||
| Qgd | Gate to Drain Miller Charge | 43 | nC | |||
| RG | Gate Resistance | VDD= 0 V, VGS = 0 V, f = 1 MHz | 6 | |||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 80A, VGS = 10 V | 47 | ns | ||
| tr | Turn-On Rise Time | 21 | ns | |||
| td(off) | Turn-Off Delay Time | 75 | ns | |||
| tf | Turn-Off Fall Time | 7 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V,IF=40A TJ=25 | 0.88 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF= 80 A, diF/dt = 150 A / s | 145 | ns | ||
| Qrr | Reverse Recovery Charge | 1.05 | C | |||
| Irrm | Peak reverse recovery current | 15 | A | |||
| Cr | Reverse transfer capacitance | 7.8 | pF | |||
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMW65N038UC1 | BMW65N038UC1 | TO247-3 | Tube | 30 units |
2512111635_Bestirpower-BMW65N038UC1_C53152693.pdf
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