Low on resistance 18m and high blocking voltage 1200V Bestirpower BC018SG12SWSD Power MOSFET device
Key Attributes
Model Number:
BC018SG12SWSD
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
18mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
5.88nF
Pd - Power Dissipation:
-
Output Capacitance(Coss):
192pF
Gate Charge(Qg):
204nC
Mfr. Part #:
BC018SG12SWSD
Package:
SOT-227
Product Description
Product Overview
The BC018SG12SWSD is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a high blocking voltage of 1200V combined with a low on-resistance of 18m, enabling system efficiency improvement and higher frequency applicability. Key features include high-speed switching with low capacitances, ease of paralleling, simple drive requirements, and avalanche ruggedness. This device is also Halogen Free and RoHS Compliant, making it suitable for Solar Inverters, Switch Mode Power Supplies, High Voltage DC/DC Converters, Motor Drives, and Pulsed Power applications.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
- Package: SOT-227
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| VDDS | Drain to Source Voltage | 1200 | V | |||
| VGSmax | Gate to Source Voltage | -8 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (VGS=18V, TC = 25) | 110 | A | |||
| ID | Drain Current Continuous (VGS=18V, TC = 100) | 85 | A | |||
| IDM | Drain Current Pulsed (Note1) | 400 | A | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| RJC | Thermal Resistance, Junction to Case | 0.27 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 35 | /W | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100 A, TC=25 | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 10 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = 18 V, VDS = 0 V | 200 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, IDS = 20 mA, TC = 25 | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 60 A, TC = 25 | 18 | 25 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 60 A, TC = 175 | 30 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 60 A, TJ = 25 | 48 | S | ||
| Ciss | Input Capacitance | VDS = 1000 V, VGS = 0V, f = 1 MHzVAC=25mV | 5880 | pF | ||
| Coss | Output Capacitance | VDS = 800V, VGS=-5/18V, ID= 60A, RG(ext) = 10, f = 1 MHzVAC=25mV | 192 | pF | ||
| Crss | Reverse Capacitance | VDD=800V, VGS=-5/18V, ID= 60A, f = 1 MHzVAC=25mV | 10 | V | ||
| Qg(tot) | Total Gate Charge | VDD=800V, VGS=-5/18V, ID= 60A, RG(ext) = 10 | 204 | nC | ||
| Qgs | Gate to Source Charge | 65 | nC | |||
| Qgd | Gate to Drain Miller Charge | 80 | nC | |||
| RG | Internal Gate Resistance | 1.0 | ||||
| td(on) | Turn-On Delay Time | VDS=800V, VGS=-5/18V, ID= 60A, RG(ext) = 10 | 50 | ns | ||
| tr | Turn-On Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | 100 | ns | |||
| tf | Turn-Off Fall Time | 60 | ns | |||
| Eon | Turn-on Switching Energy | 1650 | J | |||
| Eoff | Turn-off Switching Energy | 400 | J | |||
| IS | Maximum Continuous Diode Forward Current | 110 | A | |||
| VSD | Diode Forward Voltage | VGS = -5V, ISD = 60 A, TJ = 25 | 2.3 | V | ||
| VSD | Diode Forward Voltage | VGS = -5V, ISD = 60 A, TJ = 175 | 3.6 | V | ||
| trr | Reverse Recovery Time | VR = 800 V, VGS=-5V, ISD = 60 A, dif/dt = 1200 A/s | 200 | ns | ||
| Qrr | Reverse Recovery Charge | 1250 | nC | |||
| Irrm | Peak Reverse Recovery Current | 25 | A | |||
Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BC018SG12SWSD | BC018SG12SWSD | SOT-227 | Tube | 10 units |
2504101957_Bestirpower-BC018SG12SWSD_C46472756.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
