Low on resistance 160 milliohm silicon carbide mosfet Bestirpower BCZ120N160W1 suitable for high voltage dc dc converters
Key Attributes
Model Number:
BCZ120N160W1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
22A
RDS(on):
160mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Pd - Power Dissipation:
126W
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
40nC
Mfr. Part #:
BCZ120N160W1
Package:
TO-247-4L
Product Description
Product Overview
The BCZ120N160W1 is a N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers a high blocking voltage of 1200V combined with low on-resistance (160 m typ.) and high-speed switching capabilities due to low capacitances. This MOSFET is easy to parallel and simple to drive, featuring avalanche ruggedness and compliance with Halogen Free and RoHS standards. Its design contributes to higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies. It is suitable for applications including Solar Inverters, Switch Mode Power Supplies, High Voltage DC/DC Converters, Battery Chargers, Motor Drives, and Pulsed Power applications.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Value | Unit |
|---|---|---|---|
| Model | BCZ120N160W1 | ||
| Drain - Source Voltage (VDSmax) | VGS=0V, ID=100A | 1200 | V |
| Continuous Drain Current (ID) | VGS=18V, TC=25C | 22 | A |
| Continuous Drain Current (ID) | VGS=18V, TC=100C | 16 | A |
| On-Resistance (RDS(on), typ) | VGS = 18 V, ID = 10 A, TC = 25C | 160 | m |
| Gate Charge (Qg, typ) | 40 | nC | |
| Gate - Source Voltage (VGSmax) | Absolute maximum values | -8 / +22 | V |
| Gate - Source Voltage (VGSop) | Recommended operational values | -5 / +18 | V |
| Pulse Drain Current (IDM) | Pulse width limited by Tjmax | 58 | A |
| Operating Junction and Storage Temperature (TJ, TSTG) | -55 to 175 | C | |
| Thermal Resistance, Junction to Case (RJC, Max.) | 1.19 | /W | |
| Thermal Resistance, Junction to Ambient (RJA, Max.) | 27.47 | /W | |
| Soldering temperature (Tsold) | wave soldering only allowed at leads | 260 | |
| Power Dissipation (PD) | TC = 25 | 126 | W |
| Derate Above 25 | 0.84 | W/ | |
| Drain to Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID=100 A | 1200 | V |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID=5.0 mA, TC=25C | 2.0 - 3.4 - 4.0 | V |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID=5.0 mA, TC=150C | 2.7 | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V | 10 - 100 | A |
| Gate-Source Leakage Current (IGSS) | VGS = 18 V, VDS = 0 V | 10 - 200 | nA |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 10 A, TC = 25C | 130 - 180 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 15 V, ID = 10 A, TC = 25C | 160 - 190 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 10 A, TC = 150C | 230 | m |
| Transconductance (gfs) | VGS = 18 V, ID = 10 A, TJ = 25C | 6.2 | S |
| Transconductance (gfs) | VGS = 18 V, ID = 10 A, TJ = 150C | 3.7 | S |
| Input Capacitance (Ciss) | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | 818 | pF |
| Output Capacitance (Coss) | 41 | ||
| Reverse Transfer Capacitance (Crss) | 8 | ||
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 5 A, TJ = 25C | 3.7 | V |
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 5 A, TJ = 150C | 3.2 | V |
| Continuous Diode Forward Current (IS) | TC = 25 | 30 | A |
| Reverse Recovery time (trr) | VGS = -5V, ISD = 10 A, VR= 800V, dif / dt=1200A/s | 10 | ns |
| Reverse Recovery Charge (Qrr) | 40 | nC | |
| Peak Reverse Recovery Current (Irrm) | 3 | A | |
| Turn-On Switching Energy (EON) | VDS=800V, VGS= -5/18V,ID=10A, RG(ext) = 0, L= 256H | 200 | J |
| Turn-Off Switching Energy (EOFF) | VDS=800V, VGS= -5/18V,ID=100A, RG(ext) = 0, Timing relative to VDS | 20 | ns |
| Turn-On Delay Time (td(on)) | 45 | ns | |
| Rise Time (tr) | 20 | ns | |
| Turn-Off Delay Time (td(off)) | 15 | ns | |
| Fall Time (tf) | 10.0 | ||
| Internal Gate Resistance (RG(int)) | f= 1 MHz, VAC=25mV | 9.6 | nC |
| Gate to Source Charge (Qgs) | VDD=800V, VGS= -5/18V,ID=10A | 19 | |
| Gate to Drain Charge (Qgd) | 40 | nC | |
| Total Gate Charge (Qg) | 126 | W | |
| Package Type | TO247-4L | ||
| Packing Method | Tube | ||
| Quantity | 30 units |
2507161830_Bestirpower-BCZ120N160W1_C42401701.pdf
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